Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN

Tech ID: 21809 / UC Case 2007-423-0

Brief Description

Highly-efficient cleaved facet edge-emitting laser diodes grown on semipolar gallium nitride substrates.

Background

Current group-III nitride lasers are grown on polar c-plane substrates and usually employ dry-etched facets, which are inherently rough. Since these devices suffer from reduced efficiency due to high polarization-induced electric fields and scattering loss, there is a need for a high-efficiency laser diode that avoids these shortcomings.

Description

Researchers at the University of California, Santa Barbara have developed cleaved facet edge-emitting laser diodes grown on semipolar gallium nitride substrates. Because the devices are grown on a semipolar orientation, they have lower thresholds and higher efficiencies. The efficiency is further increased due to smooth, low loss cavities achieved by cleaved mirror facets. These devices are applicable to high brightness lighting displays, high resolution printers, projection displays, next generation DVD players, medical imaging, and efficient solid-state lighting.

Advantages

  • Lower thresholds and higher efficiencies than standard polar c-plane laser diodes
  • May offer higher wall-plug efficiencies than can be achieved with LEDs
  • Smooth low loss mirror facets with high reflectivity

Applications

  • High Brightness Lighting Displays
  • High Resolution Printers
  • Projection Displays
  • Next Generation DVD Players
  • Medical Imaging
  • Efficient Solid-State Lighting

 

This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

 

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,541,869 09/24/2013 2007-423
 

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Keywords

LED, laser diode, indssl, indled, cenIEE, indfeat

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