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Highly Compact, High-Index Dielectric Nanostructures for Deep-Ultraviolet Devices
Brief description not available
III-Nitride-Based Devices Grown On Thin Template On Thermally Decomposed Material
Nitride Based Ultraviolet LED with an Ultraviolet Transparent Contact
Activation of P-Type Layers of Tunnel Junctions in Micro-LEDs
Size-Independent Forward Voltage Micro-LED with an Epitaxial Junction
Method For The Removal Of Devices Using The Trench
III-Nitride Tunnel Junction LED with High Wall Plug Efficiency
Iii-N Transistor With Stepped Cap Layers
A new structure for III-N transistors that is able to maintain a high breakdown and operating voltage while improving the gain of the device.
Fabrication of Relaxed Semiconductor Films without Crystal Defects
A technique for making relaxed InGaN layers without crystal defects.
Methods for Locally Changing the Electric Field Distribution in Electron Devices
A surface treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions.
Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
An m-plane VCSEL with an active region that has thick quantum wells and operation in continuous wave.
Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
A way to reduce leakage current and increase the efficiency of III-Nitride microLEDs via ALD sidewall passivation.
Achieving “Active P-Type Layer/Layers” In III-Nitride Epitaxial Or Device Structures Having Buried P-Type Layers
Researchers at the University of California, Santa Barbara have created both surface and buried p-type regions without the need for doping the materials with an acceptor.
Methods for Fabricating III-Nitride Tunnel Junction Devices
Methods of physical vapor deposition for III-nitride tunnel junction devices.
Contact Architectures for Tunnel Junction Devices
Stand-Alone Ceramic Phosphor Composites for Laser-Excited Solid-State White Lighting
A method for generating a stand-alone ceramic phosphor composite for use in solid state white light generating devices that successfully reduces the operating temperature of the phosphor material by 50%, increases lumen output, reduces cost of materials, and decreases preparation time.
Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
Increased Light Extraction with Multistep Deposition of ZnO on GaN
A method of depositing ZnO on III-nitride materials using a multistep approach involving the deposition of a thin seed layer followed by the deposition of a thicker bulk layer.
Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
III-Nitride Tunnel Junction with Modified Interface
Improved Anisotropic Strain Control in Semipolar Nitride Devices
A method to control the anisotrophy of strain in semipolar nitride-based active layers of optoelectronic devices while maintaining high device performance and efficiency.
Tunable White Light Based on Polarization-Sensitive LEDs
Polarized white LEDs that can improve system efficiency by removing the need for an external polarizer.
High Light Extraction Efficiency III-Nitride LED
A III-nitride light emitting diode (LED) with increased light extraction from having at least one textured surface of a semipolar or nonpolar plane of a III-nitride layer of the LED.
High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
An (Al, Ga, In)N light emitting device in which high light generation efficiency occurs by fabricating the device using non-polar or semi-polar GaN crystals.
Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
A method to grow semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices on suitable substrates or planar templates in which a large area of the semipolar film is parallel to the substrate surface.