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Iii-N Transistor With Stepped Cap Layers

A new structure for III-N transistors that is able to maintain a high breakdown and operating voltage while improving the gain of the device.

Fabrication of Relaxed Semiconductor Films without Crystal Defects

A technique for making relaxed InGaN layers without crystal defects.

Heterogeneously Integrated GaN on Si Photonic Integrated Circuits

A process that results in new capabilities of GaN lasers. Functionalities include surface emission, beam steering, enhanced performance, low waveguide loss, and superior reliability.

Wafer Bonding for Embedding Active Regions with Relaxed Nanofeatures

An alternative method, using wafer bonding, to connect relaxed nanostructures in the active region with separately grown material.

Methods for Locally Changing the Electric Field Distribution in Electron Devices

A surface treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions.

Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation

An m-plane VCSEL with an active region that has thick quantum wells and operation in continuous wave.

Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS

A way to reduce leakage current and increase the efficiency of III-Nitride microLEDs via ALD sidewall passivation. 

Multifaceted III-Nitride Surface-Emitting Laser

Improved laser capability using III-Nitride VCSELs as the illumination source for sensing applications of a fluorescent sample.

High Mobility Organic Semiconductors

Brief description not available

Achieving “Active P-Type Layer/Layers” In III-Nitride Epitaxial Or Device Structures Having Buried P-Type Layers

Researchers at the University of California, Santa Barbara have created both surface and buried p-type regions without the need for doping the materials with an acceptor.

Methods for Fabricating III-Nitride Tunnel Junction Devices

Methods of physical vapor deposition for III-nitride tunnel junction devices.

Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals

A new process for heating vessels used in the ammonothermal growth of group-III nitrides.

Contact Architectures for Tunnel Junction Devices

Methods and devices for improving performance of III-nitride light emitting devices.

Unipolar Light Emitting Devices On Silicon Based Substrates

A process that provides a less expensive alternative for growing light emitting material compared to growing on lattice matched native III-V substrates.

Stand-Alone Ceramic Phosphor Composites for Laser-Excited Solid-State White Lighting

A method for generating a stand-alone ceramic phosphor composite for use in solid state white light generating devices that successfully reduces the operating temperature of the phosphor material by 50%, increases lumen output, reduces cost of materials, and decreases preparation time.

Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices

Hybrid growth method for III-nitride tunnel junction devices that uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions.

Increased Light Extraction with Multistep Deposition of ZnO on GaN

A method of depositing ZnO on III-nitride materials using a multistep approach involving the deposition of a thin seed layer followed by the deposition of a thicker bulk layer.

Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide

A method of bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques.

III-Nitride Tunnel Junction with Modified Interface

A method for improving the performance of semipolar III-nitride light-emitting devices. 

Improved Anisotropic Strain Control in Semipolar Nitride Devices

A method to control the anisotrophy of strain in semipolar nitride-based active layers of optoelectronic devices while maintaining high device performance and efficiency.

Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates

A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates that uses an inert carrier gas such as N2.

Tunable White Light Based on Polarization-Sensitive LEDs

Polarized white LEDs that can improve system efficiency by removing the need for an external polarizer.

High Light Extraction Efficiency III-Nitride LED

A III-nitride light emitting diode (LED) with increased light extraction from having at least one textured surface of a semipolar or nonpolar plane of a III-nitride layer of the LED.

High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices

An (Al, Ga, In)N light emitting device in which high light generation efficiency occurs by fabricating the device using non-polar or semi-polar GaN crystals.

Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates

A method for growing planar nonpolar III-nitride films that have atomically smooth surfaces without any macroscopic surface undulations. 

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