A process that results in new capabilities of GaN lasers. Functionalities include surface emission, beam steering, enhanced performance, low waveguide loss, and superior reliability.

A structure for improving the performance of III-nitride light-emitting devices.

An alternative method, using wafer bonding, to connect relaxed nanostructures in the active region with separately grown material.

A nano-patterned GaN/InGaN quantum well metasurface with high unidirectional photoluminescence that can be used for the development of compact LEDs with high directional emissions.

An edge-emitting laser diode that leverages the design space uniquely using a tunnel junction contact to improve laser diode performance.

A resonant-cavity device that utilizes stimulated emission efficiency and/or narrows the emission angular profile.

A way to reproduce micron and submicron scale III-nitride LEDs and/or devices and remove them from growth substrates.

A surface treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions.

An m-plane VCSEL with an active region that has thick quantum wells and operation in continuous wave.

A way to reduce leakage current and increase the efficiency of III-Nitride microLEDs via ALD sidewall passivation. 

Improved laser capability using III-Nitride VCSELs as the illumination source for sensing applications of a fluorescent sample.

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Researchers at the University of California, Santa Barbara have created both surface and buried p-type regions without the need for doping the materials with an acceptor.

Researchers at the University of California, Santa Barbara have developed a novel inorganic luminescent material that exhibits three strong emission bands in the visible region (blue, green, and red) when excited by near-UV light.

Methods of physical vapor deposition for III-nitride tunnel junction devices.

A new process for heating vessels used in the ammonothermal growth of group-III nitrides.

UC Santa Barbara researchers have created the very first monolithic and transparent blue-emitting phosphor that takes UV light and transforms it into blue light.

Methods and devices for improving performance of III-nitride light emitting devices.

A process that provides a less expensive alternative for growing light emitting material compared to growing on lattice matched native III-V substrates.

A method for generating a stand-alone ceramic phosphor composite for use in solid state white light generating devices that successfully reduces the operating temperature of the phosphor material by 50%, increases lumen output, reduces cost of materials, and decreases preparation time.

Hybrid growth method for III-nitride tunnel junction devices that uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions.

A method of depositing ZnO on III-nitride materials using a multistep approach involving the deposition of a thin seed layer followed by the deposition of a thicker bulk layer.

A method of bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques.

A method for improving the performance of semipolar III-nitride light-emitting devices. 

A method to control the anisotrophy of strain in semipolar nitride-based active layers of optoelectronic devices while maintaining high device performance and efficiency.