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Nitride Based Ultraviolet LED with an Ultraviolet Transparent Contact
Brief description not available
Activation of P-Type Layers of Tunnel Junctions in Micro-LEDs
Size-Independent Forward Voltage Micro-LED with an Epitaxial Junction
Integration And Mass Transfer Of Microleds
Method For The Removal Of Devices Using The Trench
III-Nitride Tunnel Junction LED with High Wall Plug Efficiency
Iii-N Transistor With Stepped Cap Layers
A new structure for III-N transistors that is able to maintain a high breakdown and operating voltage while improving the gain of the device.
Fabrication of Relaxed Semiconductor Films without Crystal Defects
A technique for making relaxed InGaN layers without crystal defects.
Heterogeneously Integrated GaN on Si Photonic Integrated Circuits
A process that results in new capabilities of GaN lasers. Functionalities include surface emission, beam steering, enhanced performance, low waveguide loss, and superior reliability.
Wafer Bonding for Embedding Active Regions with Relaxed Nanofeatures
An alternative method, using wafer bonding, to connect relaxed nanostructures in the active region with separately grown material.
Methods for Locally Changing the Electric Field Distribution in Electron Devices
A surface treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions.
Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
An m-plane VCSEL with an active region that has thick quantum wells and operation in continuous wave.
Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
A way to reduce leakage current and increase the efficiency of III-Nitride microLEDs via ALD sidewall passivation.
Multifaceted III-Nitride Surface-Emitting Laser
Improved laser capability using III-Nitride VCSELs as the illumination source for sensing applications of a fluorescent sample.
Achieving “Active P-Type Layer/Layers” In III-Nitride Epitaxial Or Device Structures Having Buried P-Type Layers
Researchers at the University of California, Santa Barbara have created both surface and buried p-type regions without the need for doping the materials with an acceptor.
Methods for Fabricating III-Nitride Tunnel Junction Devices
Methods of physical vapor deposition for III-nitride tunnel junction devices.
Contact Architectures for Tunnel Junction Devices
Unipolar Light Emitting Devices On Silicon Based Substrates
A process that provides a less expensive alternative for growing light emitting material compared to growing on lattice matched native III-V substrates.
Stand-Alone Ceramic Phosphor Composites for Laser-Excited Solid-State White Lighting
A method for generating a stand-alone ceramic phosphor composite for use in solid state white light generating devices that successfully reduces the operating temperature of the phosphor material by 50%, increases lumen output, reduces cost of materials, and decreases preparation time.
Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
Increased Light Extraction with Multistep Deposition of ZnO on GaN
A method of depositing ZnO on III-nitride materials using a multistep approach involving the deposition of a thin seed layer followed by the deposition of a thicker bulk layer.
Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
III-Nitride Tunnel Junction with Modified Interface
Improved Anisotropic Strain Control in Semipolar Nitride Devices
A method to control the anisotrophy of strain in semipolar nitride-based active layers of optoelectronic devices while maintaining high device performance and efficiency.
Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates that uses an inert carrier gas such as N2.