A new structure for III-N transistors that is able to maintain a high breakdown and operating voltage while improving the gain of the device.

A way to separate micron/sub-micron scale, c-plane LEDs and other devices from their growth substrates.

An etching technique that utilizes photo-generated holes to permit the electrochemical etching of a material, such as III-nitride, by achieving smooth etched n-type semipolar GaN surfaces. Normal 0 false false false EN-US X-NONE X-NONE /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Times New Roman",serif;}

A technique for making relaxed InGaN layers without crystal defects.

A process that results in new capabilities of GaN lasers. Functionalities include surface emission, beam steering, enhanced performance, low waveguide loss, and superior reliability.

A structure for improving the performance of III-nitride light-emitting devices.

An alternative method, using wafer bonding, to connect relaxed nanostructures in the active region with separately grown material.

A nano-patterned GaN/InGaN quantum well metasurface with high unidirectional photoluminescence that can be used for the development of compact LEDs with high directional emissions.

An edge-emitting laser diode that leverages the design space uniquely using a tunnel junction contact to improve laser diode performance.

A resonant-cavity device that utilizes stimulated emission efficiency and/or narrows the emission angular profile.

A way to reproduce micron and submicron scale III-nitride LEDs and/or devices and remove them from growth substrates.

A surface treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions.

An m-plane VCSEL with an active region that has thick quantum wells and operation in continuous wave.

A way to reduce leakage current and increase the efficiency of III-Nitride microLEDs via ALD sidewall passivation. 

Improved laser capability using III-Nitride VCSELs as the illumination source for sensing applications of a fluorescent sample.

Brief description not available

Researchers at the University of California, Santa Barbara have created both surface and buried p-type regions without the need for doping the materials with an acceptor.

Researchers at the University of California, Santa Barbara have developed a novel inorganic luminescent material that exhibits three strong emission bands in the visible region (blue, green, and red) when excited by near-UV light.

Methods of physical vapor deposition for III-nitride tunnel junction devices.

A new process for heating vessels used in the ammonothermal growth of group-III nitrides.

Methods and devices for improving performance of III-nitride light emitting devices.

A process that provides a less expensive alternative for growing light emitting material compared to growing on lattice matched native III-V substrates.

A method for generating a stand-alone ceramic phosphor composite for use in solid state white light generating devices that successfully reduces the operating temperature of the phosphor material by 50%, increases lumen output, reduces cost of materials, and decreases preparation time.

Hybrid growth method for III-nitride tunnel junction devices that uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions.

A method of depositing ZnO on III-nitride materials using a multistep approach involving the deposition of a thin seed layer followed by the deposition of a thicker bulk layer.