A new structure for III-N transistors that is able to maintain a high breakdown and operating voltage while improving the gain of the device.

A technique for making relaxed InGaN layers without crystal defects.

A process that results in new capabilities of GaN lasers. Functionalities include surface emission, beam steering, enhanced performance, low waveguide loss, and superior reliability.

An alternative method, using wafer bonding, to connect relaxed nanostructures in the active region with separately grown material.

A surface treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions.

An m-plane VCSEL with an active region that has thick quantum wells and operation in continuous wave.

A way to reduce leakage current and increase the efficiency of III-Nitride microLEDs via ALD sidewall passivation. 

Improved laser capability using III-Nitride VCSELs as the illumination source for sensing applications of a fluorescent sample.

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Researchers at the University of California, Santa Barbara have created both surface and buried p-type regions without the need for doping the materials with an acceptor.

Methods of physical vapor deposition for III-nitride tunnel junction devices.

A new process for heating vessels used in the ammonothermal growth of group-III nitrides.

Methods and devices for improving performance of III-nitride light emitting devices.

A process that provides a less expensive alternative for growing light emitting material compared to growing on lattice matched native III-V substrates.

A method for generating a stand-alone ceramic phosphor composite for use in solid state white light generating devices that successfully reduces the operating temperature of the phosphor material by 50%, increases lumen output, reduces cost of materials, and decreases preparation time.

Hybrid growth method for III-nitride tunnel junction devices that uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions.

A method of depositing ZnO on III-nitride materials using a multistep approach involving the deposition of a thin seed layer followed by the deposition of a thicker bulk layer.

A method of bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques.

A method for improving the performance of semipolar III-nitride light-emitting devices. 

A method to control the anisotrophy of strain in semipolar nitride-based active layers of optoelectronic devices while maintaining high device performance and efficiency.

A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates that uses an inert carrier gas such as N2.

Polarized white LEDs that can improve system efficiency by removing the need for an external polarizer.

A III-nitride light emitting diode (LED) with increased light extraction from having at least one textured surface of a semipolar or nonpolar plane of a III-nitride layer of the LED.

An (Al, Ga, In)N light emitting device in which high light generation efficiency occurs by fabricating the device using non-polar or semi-polar GaN crystals.

A method for growing planar nonpolar III-nitride films that have atomically smooth surfaces without any macroscopic surface undulations.