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Iii-N Transistor With Stepped Cap Layers

A new structure for III-N transistors that is able to maintain a high breakdown and operating voltage while improving the gain of the device.

Fabrication of Relaxed Semiconductor Films without Crystal Defects

A technique for making relaxed InGaN layers without crystal defects.

Methods for Locally Changing the Electric Field Distribution in Electron Devices

A surface treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions.

Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation

An m-plane VCSEL with an active region that has thick quantum wells and operation in continuous wave.

Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS

A way to reduce leakage current and increase the efficiency of III-Nitride microLEDs via ALD sidewall passivation. 

Achieving “Active P-Type Layer/Layers” In III-Nitride Epitaxial Or Device Structures Having Buried P-Type Layers

Researchers at the University of California, Santa Barbara have created both surface and buried p-type regions without the need for doping the materials with an acceptor.

Methods for Fabricating III-Nitride Tunnel Junction Devices

Methods of physical vapor deposition for III-nitride tunnel junction devices.

Stand-Alone Ceramic Phosphor Composites for Laser-Excited Solid-State White Lighting

A method for generating a stand-alone ceramic phosphor composite for use in solid state white light generating devices that successfully reduces the operating temperature of the phosphor material by 50%, increases lumen output, reduces cost of materials, and decreases preparation time.

Increased Light Extraction with Multistep Deposition of ZnO on GaN

A method of depositing ZnO on III-nitride materials using a multistep approach involving the deposition of a thin seed layer followed by the deposition of a thicker bulk layer.

Improved Anisotropic Strain Control in Semipolar Nitride Devices

A method to control the anisotrophy of strain in semipolar nitride-based active layers of optoelectronic devices while maintaining high device performance and efficiency.

Tunable White Light Based on Polarization-Sensitive LEDs

Polarized white LEDs that can improve system efficiency by removing the need for an external polarizer.

High Light Extraction Efficiency III-Nitride LED

A III-nitride light emitting diode (LED) with increased light extraction from having at least one textured surface of a semipolar or nonpolar plane of a III-nitride layer of the LED.

High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices

An (Al, Ga, In)N light emitting device in which high light generation efficiency occurs by fabricating the device using non-polar or semi-polar GaN crystals.

Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices

A method to grow semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices on suitable substrates or planar templates in which a large area of the semipolar film is parallel to the substrate surface. 

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