A new structure for III-N transistors that is able to maintain a high breakdown and operating voltage while improving the gain of the device.

A way to separate micron/sub-micron scale, c-plane LEDs and other devices from their growth substrates.

An etching technique that utilizes photo-generated holes to permit the electrochemical etching of a material, such as III-nitride, by achieving smooth etched n-type semipolar GaN surfaces. Normal 0 false false false EN-US X-NONE X-NONE /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Times New Roman",serif;}

A technique for making relaxed InGaN layers without crystal defects.

A process that results in new capabilities of GaN lasers. Functionalities include surface emission, beam steering, enhanced performance, low waveguide loss, and superior reliability.

An alternative method, using wafer bonding, to connect relaxed nanostructures in the active region with separately grown material.

An edge-emitting laser diode that leverages the design space uniquely using a tunnel junction contact to improve laser diode performance.

A resonant-cavity device that utilizes stimulated emission efficiency and/or narrows the emission angular profile.

A way to reproduce micron and submicron scale III-nitride LEDs and/or devices and remove them from growth substrates.

A surface treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions.

An m-plane VCSEL with an active region that has thick quantum wells and operation in continuous wave.

A way to reduce leakage current and increase the efficiency of III-Nitride microLEDs via ALD sidewall passivation. 

Improved laser capability using III-Nitride VCSELs as the illumination source for sensing applications of a fluorescent sample.

Brief description not available

Researchers at the University of California, Santa Barbara have created both surface and buried p-type regions without the need for doping the materials with an acceptor.

Methods of physical vapor deposition for III-nitride tunnel junction devices.

A new process for heating vessels used in the ammonothermal growth of group-III nitrides.

Methods and devices for improving performance of III-nitride light emitting devices.

A process that provides a less expensive alternative for growing light emitting material compared to growing on lattice matched native III-V substrates.

A method for generating a stand-alone ceramic phosphor composite for use in solid state white light generating devices that successfully reduces the operating temperature of the phosphor material by 50%, increases lumen output, reduces cost of materials, and decreases preparation time.

Hybrid growth method for III-nitride tunnel junction devices that uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions.

A method of depositing ZnO on III-nitride materials using a multistep approach involving the deposition of a thin seed layer followed by the deposition of a thicker bulk layer.

A method of bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques.

A method for improving the performance of semipolar III-nitride light-emitting devices. 

A method to control the anisotrophy of strain in semipolar nitride-based active layers of optoelectronic devices while maintaining high device performance and efficiency.