Method For The Removal Of Devices Using The Trench

Tech ID: 31802 / UC Case 2019-398-0

Background

GaN substrates produce high quality III-nitride devices, but the substrate itself is expensive. Recycling the GaN layer would provide substantial cost-saving opportunities. Existing methods of removing devices from their substrates have demonstrated damage to the semiconductor layers or require an arduous etching process which dilutes the benefits of recycling the substrate at all.

Description

Researchers at the University of California, Santa Barbara have developed a technique for removing III-nitride devices from their substrates with quick processing times and without significant damage to the devices. Before devices are grown on their substrate, the substrate is etched with another III-nitride layer to form trenches at the surface. A growth-restrict mask is deposited in the trenches so that the device layers do not coalesce with the substrate, and the substrate can be removed and recycled, reducing fabrication costs. This technique is applicable to multiple semiconductor device types.

Advantages

  • Drastic cost reduction in GaN substrates via recycling
  • Smooth cleaving surfaces
  • Quick processing

Applications

  • Laser diodes
  • LEDs
  • Schottky barrier diodes
  • MOSFETs

Patent Status

Country Type Number Dated Case
Patent Cooperation Treaty Reference for National Filings WO2020150511 07/23/2020 2019-398
 

Patent Pending

Contact

Learn About UC TechAlerts - Save Searches and receive new technology matches

Inventors

  • Gandrothula, Srinivas
  • Kamikawa, Takeshi

Other Information

Keywords

GaN, substrate, trench, III-nitride, laser diode, LED, MOSFET, Schottky barrier diode

Categorized As