Improved Reliability & Enhanced Performance of III-Nitride Tunnel Junction Optoelectronic Devices

Tech ID: 29876 / UC Case 2018-260-0

Brief Description

A structure for improving the performance and reliability of III-nitride based tunnel junction optoelectronic devices.

Background

Tunnel junctions are a breakthrough alternative to traditional transparent or metallic contacts but have typically required a regrowth by Molecular Beam Epitaxy (MBE). Metal organic chemical vapor (MOCVD) tools are more commonly used in semiconductor processing related to optoelectronic devices such as light-emitting diodes (LEDs), vertical-cavity surface emitting lasers (VCSELs), edge-emitting laser diodes (EELDs), and solar cells. However, tunnel junctions grown by MOCVD are difficult to achieve. The heavy n-type doping required leads to a dislocation incline, resulting in a buildup of tensile stress that can lead to morphological degradation and reduced carriers tunneling efficiency. Improving the n+GaN layer at the tunnel junction interface could improve the efficiency, reliability, and overall quality of III-nitride optoelectronic devices that use a tunnel junction.

Description

Researchers at the University of California, Santa Barbara have developed a structure for improving the performance and reliability of III-nitride based tunnel junction optoelectronic devices. The proposed structure allows for improved surface morphology, leading to a uniform field across the tunnel junction interface. Additionally, both the barrier for interband tunneling distance and the forward voltage in the devices can be significantly reduced. A smoother surface of the n-type material is realized and a higher carrier concentration in the n-type material is observed. Since MOCVD tools are already commonly used in semiconductor processing this technology can be readily and easily applied to the current market.

Advantages

  • Enhanced performance
  • Improved reliability
  • Can be easily commercialized
  • Smoother surface & higher carrier concentration in the n-type material

Applications

  • Optoelectronics (LEDs, VCSELs, EELDs, and Solar Cells)

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 11,158,760 10/26/2021 2018-260
United States Of America Published Application 22-0029049 01/27/2022 2018-260
 

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Keywords

optoelectronics, LED, VCSELs, indfeat, Solar cells, Tunnel junction

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