A method of bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques.
III-nitride-based solid state lighting has become an ever growing lighting source for various illumination applications. Given its ability to emit through a range of visible wavelengths, further development of light emitting devices (LEDs) incorporating these materials is essential to increase overall efficiency. Wafer bonding permits extension of the design parameters of these devices by allowing the formation of heterojunctions that are not possible through conventional deposition schemes. Bonding to transparent conductive materials leads to higher efficiency due to enhanced light extraction.
Researchers at the University of California, Santa Barbara have developed a method of bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques. Light emitting devices (LEDs) can be processed using this technique. This method of fabricating LEDs yields higher efficiency LEDs than traditional methods and allows for greater design options for fabricating devices such as III-nitride-based LEDs.
|Patent Cooperation Treaty||Reference for National Filings||WO2017136832||08/10/2017||2016-324|
LED, tunnel junction, wafer bonded, conductive oxide, III-nitride, indfeat, indenergy