Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
Tech ID: 25741 / UC Case 2016-324-0
Background
The development of light emitting devices (LEDs) with optimized materials is essential to increase the overall efficiency of the myriad commercial applications of the LED. Wafer bonding permits extension of the design parameters of these devices by allowing the formation of heterojunctions that are not possible through conventional deposition schemes. Bonding to transparent conductive materials leads to higher efficiency due to enhanced light extraction.
Description
Researchers at the University of California, Santa Barbara have developed a method for bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques. Light emitting devices (LEDs) can be processed using this technique which yields higher efficiency devices than traditional methods and allows for greater design options for fabricating devices such as fully transparent tunnel junction-based III-nitride-based LEDs.
Advantages
- Increased light extraction efficiency
- Greater design options for fabricating devices
Applications
- Fully transparent tunnel junction-based LEDs
- LEDs
Patent Status
| Country | Type | Number | Dated | Case |
| Patent Cooperation Treaty | Reference for National Filings | WO2017136832 | 08/10/2017 | 2016-324 |
Patent Pending
Contact
- University of California, Santa Barbara Office of Technology & Industry Alliances
- dobis@tia.ucsb.edu
- tel: View Phone Number.
Inventors
- DenBaars, Steven P.
- Mughal, Asad J.
- Speck, James S.
- Young, Erin C.
Other Information
Keywords
LED, tunnel junction, wafer bonded, conductive oxide, III-nitride, indfeat, indenergy
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- GaN-Based Thermoelectric Device for Micro-Power Generation
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- Integration And Mass Transfer Of Microleds
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