Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide

Tech ID: 25741 / UC Case 2016-324-0


The development of light emitting devices (LEDs) with optimized materials is essential to increase the overall efficiency of the myriad commercial applications of the LED. Wafer bonding permits extension of the design parameters of these devices by allowing the formation of heterojunctions that are not possible through conventional deposition schemes. Bonding to transparent conductive materials leads to higher efficiency due to enhanced light extraction. 


Researchers at the University of California, Santa Barbara have developed a method for bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques. Light emitting devices (LEDs) can be processed using this technique which yields higher efficiency devices than traditional methods and allows for greater design options for fabricating devices such as fully transparent tunnel junction-based III-nitride-based LEDs.


  • Increased light extraction efficiency
  • Greater design options for fabricating devices


  • Fully transparent tunnel junction-based LEDs
  • LEDs

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 11,411,137 08/09/2022 2016-324


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Other Information


LED, tunnel junction, wafer bonded, conductive oxide, III-nitride, indfeat, indenergy

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