Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
Tech ID: 25741 / UC Case 2016-324-0
Background
The development of light emitting devices (LEDs) with optimized materials is essential to increase the overall efficiency of the myriad commercial applications of the LED. Wafer bonding permits extension of the design parameters of these devices by allowing the formation of heterojunctions that are not possible through conventional deposition schemes. Bonding to transparent conductive materials leads to higher efficiency due to enhanced light extraction.
Description
Researchers at the University of California, Santa Barbara have developed a method for bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques. Light emitting devices (LEDs) can be processed using this technique which yields higher efficiency devices than traditional methods and allows for greater design options for fabricating devices such as fully transparent tunnel junction-based III-nitride-based LEDs.
Advantages
- Increased light extraction efficiency
- Greater design options for fabricating devices
Applications
- Fully transparent tunnel junction-based LEDs
- LEDs
Patent Status
| Country | Type | Number | Dated | Case |
| United States Of America | Published Application | 20200335663 | 10/22/2020 | 2016-324 |
Contact
- University of California, Santa Barbara Office of Technology & Industry Alliances
- dobis@tia.ucsb.edu
- tel: View Phone Number.
Inventors
- DenBaars, Steven P.
- Mughal, Asad J.
- Speck, James S.
- Young, Erin C.
Other Information
Keywords
LED, tunnel junction, wafer bonded, conductive oxide, III-nitride, indfeat, indenergy
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- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
- Defect Reduction in GaN films using in-situ SiNx Nanomask
- Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
- Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
- Low Temperature Deposition of Magnesium Doped Nitride Films
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- Size-Independent Forward Voltage Micro-LED with an Epitaxial Junction
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- Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
- Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
- Increased Light Extraction with Multistep Deposition of ZnO on GaN
- Selective-Area Mesoporous Semiconductors And Devices For Optoelectronic And Photonic Applications
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- Oxyfluoride Phosphors for Use in White Light LEDs
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- Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
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- III-V Nitride Device Structures on Patterned Substrates
- Activation of P-Type Layers of Tunnel Junctions in Micro-LEDs
- Method for Increasing GaN Substrate Area in Nitride Devices
- Nitride Based Ultraviolet LED with an Ultraviolet Transparent Contact
- Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
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- Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
- LED Device Structures with Minimized Light Re-Absorption
- Growth of Planar Semi-Polar Gallium Nitride
- Nonpolar (Al, B, In, Ga)N Quantum Well Design
- UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
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- Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
