Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide

Tech ID: 25741 / UC Case 2016-324-0

Brief Description

A method of bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques.

Background

III-nitride-based solid state lighting has become an ever growing lighting source for various illumination applications. Given its ability to emit through a range of visible wavelengths, further development of light emitting devices (LEDs) incorporating these materials is essential to increase overall efficiency. Wafer bonding permits extension of the design parameters of these devices by allowing the formation of heterojunctions that are not possible through conventional deposition schemes. Bonding to transparent conductive materials leads to higher efficiency due to enhanced light extraction. 

Description

Researchers at the University of California, Santa Barbara have developed a method of bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques. Light emitting devices (LEDs) can be processed using this technique. This method of fabricating LEDs yields higher efficiency LEDs than traditional methods and allows for greater design options for fabricating devices such as III-nitride-based LEDs.

Advantages

  • Increased light extraction efficiency
  • Greater design options for fabricating devices such as III-nitride-based LEDs

Applications

  • LEDs

Patent Status

Country Type Number Dated Case
Patent Cooperation Treaty Reference for National Filings WO2017136832 08/10/2017 2016-324
 

Patent Pending

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Inventors

Other Information

Keywords

LED, tunnel junction, wafer bonded, conductive oxide, III-nitride, indfeat, indenergy

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