Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
Tech ID: 25741 / UC Case 2016-324-0
Brief Description
A method of bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques.
Background
III-nitride-based solid state lighting has become an ever growing lighting source for various illumination applications. Given its ability to emit through a range of visible wavelengths, further development of light emitting devices (LEDs) incorporating these materials is essential to increase overall efficiency. Wafer bonding permits extension of the design parameters of these devices by allowing the formation of heterojunctions that are not possible through conventional deposition schemes. Bonding to transparent conductive materials leads to higher efficiency due to enhanced light extraction.
Description
Researchers at the University of California, Santa Barbara have developed a method of bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques. Light emitting devices (LEDs) can be processed using this technique. This method of fabricating LEDs yields higher efficiency LEDs than traditional methods and allows for greater design options for fabricating devices such as III-nitride-based LEDs.
Advantages
- Increased light extraction efficiency
- Greater design options for fabricating devices such as III-nitride-based LEDs
Applications
- LEDs
Patent Status
| Country | Type | Number | Dated | Case |
| Patent Cooperation Treaty | Reference for National Filings | WO2017136832 | 08/10/2017 | 2016-324 |
Patent Pending
Contact
- University of California, Santa Barbara Office of Technology & Industry Alliances
- dobis@tia.ucsb.edu
- tel: View Phone Number.
Inventors
- DenBaars, Steven P.
- Mughal, Asad J.
- Speck, James S.
- Young, Erin C.
Other Information
Keywords
LED, tunnel junction, wafer bonded, conductive oxide, III-nitride, indfeat, indenergy
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