(In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
Tech ID: 23146 / UC Case 2013-329-0
A novel invention to enable the fabrication of (In,Ga,Al)N optoelectronic devices with thick active layers containing a high concentration of indium (In).
Currently, the fabrication of heterojunctions for optoelectronic devices is limited to the combination of layers with either the same lattice constants or layers where the thickness of the lattice mismatched layers did not exceed its critical thickness. However, thick active regions are attractive for light emitting diodes (LEDs) with significantly reduced droop and solar cells requiring thick active regions for efficient absorption. Moreover, LED development is restricted by the green gap due to deep green LED sources being difficult to produce.
Researchers at the University of California, Santa Barbara have developed a novel invention to enable the fabrication of (In,Ga,Al)N optoelectronic devices with thick active layers containing a high concentration of indium (In). The In content of the active region can be increased while maintaining a low lattice mismatch between the active region and the current carrying layers, mitigating deterioration of device performance in the green gap. Consequently, relaxed (In,Ga,Al)N films with a lattice constant between GaN and InN can be fabricated on GaN layers of all orientations, including (0001) c-plane GaN.
• Improved performance of existing devices which require a combination of layers with large lattice mismatch
• Mitigation of defect formation in active layers
• Increase the thickness of the active layers
• Solar Cells
This technology is available for licensing.
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