A Structure For Increasing Mobility In A High-Electron-Mobility Transistor
Tech ID: 27402 / UC Case 2017-462-0
A technique that results in a significant increase of electron mobility and sheet charge density at small channel thickness.
HEMTs are solid-state electron devices made from a semiconductor heterostructure used to amplify high-frequency signals. Electron mobility is important to device performance and so it is extremely desirable to discover ways to improve electron mobility.
Researchers at the University of California, Santa Barbara have created a channel structure for semiconductor high-electron mobility transistors (HEMTs) that results in a significant increase of electron mobility and sheet charge density at small channel thickness. This enables the fabrication of devices with increased high frequency power performance and allows for better lateral and vertical scalability.
- Increased electron mobility
- Improved device performance (94 GHz)
- High-electron mobility transistors
- Power electronics
|United States Of America