III-Nitride Tunnel Junction with Modified Interface

Tech ID: 25740 / UC Case 2016-245-0


A commonly explored limitation of p-GaN is that it is a poor current spreading layer and that traditional p-contacts will increase operating voltages in III-nitride devices. The introduction of tunnel junctions solves these issues and expands the opportunities for new device designs. This technology seizes the opportunity for higher tunneling currents.


Researchers at UC Santa Barbara have developed a method for improving the tunneling currents of semipolar III-nitride devices by modifying the very highly doped (n+/p+) interface to reduce the energy barrier associated with tunneling. The modification involves introducing extra charge carriers, such as dopant atoms, or impurities that results in electronic trap states which enhance tunneling. 


  • Reduced operating voltage
  • Current spreading with GaN
  • No requirement for a TCO or silver mirrors
  • Simple fabrication
  • Ability to incorporate multiple active regions into a single device


  • LEDs
  • Edge emitting laser diodes
  • Vertical cavity surface emitting lasers (VCSELs)
  • Solar cells

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 10,685,835 06/16/2020 2016-245


Learn About UC TechAlerts - Save Searches and receive new technology matches


Other Information


indled, indssl, LED, solar cells, edge emitting laser diodes, III-nitride, p-GaN, indfeat, indmicroelec

Categorized As

Additional Technologies by these Inventors