Vertical-cavity surface-emitting lasers (VCSELs) are semiconductor laser diodes that emit light normal to the substrate. This design has many advantages over edge-emitting lasers and light-emitting diodes, such as low threshold current, circular mode profile, high-speed direct modulation, ability for single longitudinal mode operation, and two-dimensional arraying capability. As opposed to arsenide and phosphide-based devices, electrically-injected III-nitride VCSELs have been relatively difficult to create, and only eight research groups have successfully demonstrated these devices in the past decade. While most of the reports have been on c-plane, m-plane VCELs have been demonstrated and have many advantages, such as lack of the quantum confined Stark effect, higher material gain, and anisotropic gain that leads to 100% polarization ratio. However, m-plane VCSEL devices have not been able to achieve continuous wave operation.
Researchers at the University of California, Santa Barbara have created an m-plane VCSEL with an active region that has thick quantum wells and operation in continuous wave. This is the first report of a VCSEL capable of continuous wave operation. Thicker quantum wells (QWs) are possible on semipolar of nonpolar m-plane GaN, in contrast with standard c-plane GaN. These devices have improved thermal performance and a longer cavity length.
|United States Of America||Issued Patent||11,532,922||12/20/2022||2018-250|
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