Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD

Tech ID: 21821 / UC Case 2006-178-0

Brief Description

A method for enhancing growth of semipolar (Al,In,Ga,B)N films for high-performance nitride-based optoelectronics and semiconductor devices.


Existing methods of producing semipolar nitride films are extremely cumbersome and yield areas too small for device fabrication, thus there is a need for a new method that overcomes these obstacles in order to take advantage of the performance benefits of using semipolar nitride films.


Researchers at the University of California, Santa Barbara have developed a method for enhancing growth of semipolar (Al,In,Ga,B)N films via metalorganic chemical vapor deposition (MOCVD). This method involves growth of nitride films on the semipolar {11 22} plane to overcome performance limitations associated with the polar c-plane, thus increasing device efficiencies. It yields samples grown on 2-inch diameter substrates, compared with areas of a few micrometers accomplished using existing methods. This method also results in a planar film surface, few surface undulations, and a reduced number of crystallographic defects, all necessary features to support application to state-of-the-art nitride semipolar electronic devices.


  • Large available surface area (samples grown on 2-inch diameter substrates, compared to areas on the order of a few micrometers achieved by prior art)
  • Increased device efficiencies compared to c-plane devices
  • Planar film surface
  • Minimized surface undulations and crystallographic defects


  • High-Performance Nitride-Based Optoelectronics and Semiconductor Devices


This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,405,128 03/26/2013 2006-178
United States Of America Issued Patent 7,687,293 03/30/2010 2006-178


Learn About UC TechAlerts - Save Searches and receive new technology matches


Other Information


GaN, Gallium Nitride, indssl, indled, cenIEE

Categorized As

Additional Technologies by these Inventors