A technique for the growth of planar films of semi-polar nitrides, in which a large area of (Al, In, Ga)N is grown parallel to the substrate surface.
Current nitride technology for electronic and optoelectronic devices employs nitride films grown along the polar c-direction. However, conventional c-plane quantum well structures in III-nitride based optoelectronic and electronic devices suffer from the undesirable quantum-confined Stark effect (QCSE), due to the existence of strong piezoelectric effects and spontaneous polarizations. The strong built-in electric fields along the c-direction cause spatial separation of electrons and holes that in turn give rise to restricted carrier recombination efficiency, reduced oscillator strength, and red-shifted emission. The growth of non-polar GaN remains challenging and has not yet been widely adopted in the III-nitride industry.
Researchers at the University of California, Santa Barbara have developed a technique for the growth of planar films of semi-polar nitrides, in which a large area of (Al, In, Ga)N is grown parallel to the substrate surface. For example, samples can be grown on 10 mm x 10 mm or 2 inch diameter substrates. The advantage of semi-polar over c-plane nitride films is the reduction in polarization and the associated increase in internal quantum efficiency for certain devices.
This technology is available for a non-exclusive license.See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
|United States Of America||Issued Patent||8,524,012||09/03/2013||2005-471|
|United States Of America||Issued Patent||8,128,756||03/06/2012||2005-471|
|United States Of America||Issued Patent||7,704,331||04/27/2010||2005-471|
|United States Of America||Issued Patent||7,220,324||05/22/2007||2005-471|
GaN, Gallium Nitride, indssl, indbulk, cenIEE