Growth of Planar Semi-Polar Gallium Nitride

Tech ID: 21912 / UC Case 2005-471-0

Brief Description

A technique for the growth of planar films of semi-polar nitrides, in which a large area of (Al, In, Ga)N is grown parallel to the substrate surface.

Background

Current nitride technology for electronic and optoelectronic devices employs nitride films grown along the polar c-direction. However, conventional c-plane quantum well structures in III-nitride based optoelectronic and electronic devices suffer from the undesirable quantum-confined Stark effect (QCSE), due to the existence of strong piezoelectric effects and spontaneous polarizations. The strong built-in electric fields along the c-direction cause spatial separation of electrons and holes that in turn give rise to restricted carrier recombination efficiency, reduced oscillator strength, and red-shifted emission. The growth of non-polar GaN remains challenging and has not yet been widely adopted in the III-nitride industry.

Description

Researchers at the University of California, Santa Barbara have developed a technique for the growth of planar films of semi-polar nitrides, in which a large area of (Al, In, Ga)N is grown parallel to the substrate surface. For example, samples can be grown on 10 mm x 10 mm or 2 inch diameter substrates. The advantage of semi-polar over c-plane nitride films is the reduction in polarization and the associated increase in internal quantum efficiency for certain devices.

Advantages

  • Reduction in polarization and the associated increase in internal quantum efficiency for certain devices
  • Easier to grow compared to non-polar nitride films

Applications

  • Production of planar semi-polar gallium nitride

 

This technology is available for a non-exclusive license.See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,524,012 09/03/2013 2005-471
United States Of America Issued Patent 8,128,756 03/06/2012 2005-471
United States Of America Issued Patent 7,704,331 04/27/2010 2005-471
United States Of America Issued Patent 7,220,324 05/22/2007 2005-471
 

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Inventors

  • Baker, Troy J.
  • DenBaars, Steven P.
  • Fini, Paul T.
  • Haskell, Benjamin A.
  • Nakamura, Shuji
  • Speck, James S.

Other Information

Keywords

GaN, Gallium Nitride, indssl, indbulk, cenIEE

Categorized As

Additional Technologies by these Inventors