Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning

Tech ID: 24137 / UC Case 2010-804-0

Brief Description

A new method of improving performance of group-III nitride devices by limiting the strain-relaxation on crystal substrates.

 

Background

The usefulness of group-III nitrides such as gallium nitride (GaN) and its alloys has been well established for its use in the fabrication of optoelectronic and high-powered electronic devices. Given recent trends in industry standards, it is desirable to produce ultra-bright LEDs and LDs in regions beyond the blue region and in the green region. The problem with producing LEDs and LDs in the green regions by epitaxy is due to the complications in producing high-quality, high-in-composition crystals. When high-in-composition crystal structures are grown on a strained substrate layer, this causes misfit dislocations which degrade device performance.

 

Description

Researchers at the University of California, Santa Barbara have developed a new method of improving performance of group-III nitride devices by limiting the strain-relaxation on crystal substrates. Limiting the strain-relaxation on group-III nitride substrates is achieved through a novel process of patterning the substrate with a specialized film which reduces the pre-existing thread dislocations before growth of the subsequent layers. By reducing these pre-existing thread dislocations, less misfit dislocation will result during layer growth and will allow for the growth of thicker/higher in composition layers of III-nitride alloy epilayers.

 

Advantages

  • Reduced strain on device layers
  • Reduced thread and misfit dislocations
  • High thickness/composition group-III nitride stacking
  • Reduced complications of lattice mismatch
  • Improved device performance 


Applications

  • UV and Green Region LEDs and LDs
  • Group-III Nitride Materials
  • Optoelectronics and Electronic Devices 


Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,853,669 10/07/2014 2010-804
 

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Keywords

indSSL, indLED, LED, substrate patterning, III-nitride, indfeat, indenergy

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