Contact Architectures for Tunnel Junction Devices
Brief Description
Methods and devices for improving performance of III-nitride light emitting devices.
Background
Current commercially-available III-nitride light-emitting diodes (LEDs) use an active region in a biased p-n junction to allow for electron and hole injection. However, since p-type gallium nitride (p-GaN) is difficult to contact electrically and has low hole concentration and mobility, p-GaN cannot be used as a current spreading layer and traditional p-contacts will add significant voltage to devices. Despite these inherent problems, all commercial light emitting devices utilize a p-contact and a material other than p-GaN for current spreading, typically transparent conducting oxides (TCO). Thus, there is a need to improve the performance of III-Nitride light-emitting devices.
Description
Researchers at the University of California, Santa Barbara have developed methods and devices to overcome such limitations. These improvement include a III-nitride flip chip LED with a dielectric based mirror which improves light extraction and eliminates the need for a TCO or silver mirror, a high reflectivity ohmic contact to N-type gallium nitride utilizing vacuum annealed aluminum allowing for low contact resistivity and high reflectivity, and a III-Nitride tunnel junction LED with high electrostatic discharge (ESD) rating that improves the effective lateral current spreading whereby the electric field is spread evenly and dramatically increasing the peak voltage of ESD. Other improvements include the ability to create (AI, In, Ga, B)N structures, a method to fabricate high extraction efficiency thin film LEDs with tunnel junctions and substrate liftoff, and a buried tunnel junction aperture for III-nitride surface emitting lasers.
Advantages
- Improved light extraction
- Eliminates the need for a TCO or a silver mirror
- Low contact resistivity & high reflectivity
Applications
- LEDs
- III-Nitride devices
- Tunnel junctions
Patent Status
| Country | Type | Number | Dated | Case |
| Patent Cooperation Treaty | Published Application | WO2018035322 | 02/22/2018 | 2017-132 |
Additional Patent Pending
Contact
- Lauren M. Rubio
- lrubio@ucsb.edu
- tel: View Phone Number.
Inventors
- DenBaars, Steven P.
- Nakamura, Shuji
- Speck, James S.
- Yonkee, Benjamin P.
- Young, Erin C.
Other Information
Keywords
LED, indled, indfeat, Flip chip, tunnel junction, III-nitride devices, surface emitting lasers
Categorized As
Additional Technologies by these Inventors
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- Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
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- Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
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- Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
- Continuous Fluidic Printing Of MicroLEDs
- Creating and Releasing Nanoscale Light Emitting Devices from Their Growth Substrates
- Colloidal Lithography-Enabled Creation of Metasurface-Integrated MicroLEDs and Devices
- Efficient Implementation of a Tunnel Junction Contact on a Nitride-Based Edge-Emitting Laser Diode
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