Improved GaN Substrates Prepared with Ammonothermal Growth

Tech ID: 23650 / UC Case 2006-666-0

Brief Description

A method for growing m-plane GaN using an ammonothermal growth technique.

 

Background

The usefulness of gallium nitride (GaN) and its alloys has been well established for its use in the fabrication of optoelectronic and high-powered electronic devices. Most commercially available GaN-based devices are grown on conventional c-plane surfaces. The use of c-plane surfaces has disadvantages, which limit the performance of resulting devices. Recent studies have pointed out several benefits and advantages of growing m-plane devices. Despite these benefits, current technology is limited due to poor smoothness of m-plane surfaces.

 

Description

Researchers at the University of California, Santa Barbara have developed a method for growing m-plane GaN using an ammonothermal growth technique. Using this method, m-plane growth results in smoother surfaces than c-plane growth. M-plane growth has associated benefits such as p-type doping and inverted polarization charge. High p-type conductivity improves device efficiency, while transistors grown on m-plane GaN overcome high gate leakage problems of traditional GaN transistors. M-plane optical devices also experience higher emission efficiency due to the absence of a polarization field, and their optically active layer usually has higher Indium incorporation, allowing for longer wavelength emission. This novel method also reduces processing steps because flip-chip bonding and de-bonding steps are no longer needed to expose the m-plane of the growth.

 

Advantages

  • Smoother substrate surface
  • Improved device efficiency


Applications

  • LEDs and Laser Diodes
  • High Electron Mobility Transistors (HEMTs)
  • Power switching devices


Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,263,424 09/11/2012 2006-666
United States Of America Issued Patent 7,755,172 07/13/2010 2006-666
 

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Inventors

  • Hashimoto, Tadao
  • Nakamura, Shuji
  • Sato, Hitoshi

Other Information

Keywords

indssl, indammono, ammonothermal, cenIEE, indbulk, indfeat

Categorized As

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