A method for growing an improved quality device by depositing a low temperature magnesium doped nitride semiconductor thin film.
Magnesium doped gallium nitride has been extensively used in nitride based LEDs, but requires high deposition temperatures. Indium nitride has a high volatility and readily evaporates out of the InGaN films when exposed to a high enough temperature or a low temperature for an extended period of time. This time and temperature value is commonly referred to as the material's thermal budget. As a result, there is a need for improved methods for the growth of low temperature magnesium doped nitride planar films, wherein the thermal budget of the previously deposited indium nitride containing multiple quantum wells is considerably reduced.
Researchers at the University of California, Santa Barbara have developed a method for growing an improved quality device by depositing a low temperature magnesium doped nitride semiconductor thin film. This process includes using deposition temperature for the magnesium doped GaN film that is lower than the one used for the deposition of the multi quantum well. This results in a significant increase in the output power of a nitride LED.
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|United States Of America||Issued Patent||7,709,284||05/04/2010||2006-678|
thin film, indssl, indled, cenIEE