MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride

Brief Description

Methods for successfully growingplanar non-polar m-plane gallium nitride (GaN) with metalorganic chemical vapor deposition (MOCVD).

Background

It is relatively easy to grow c-plane GaN due to its large growth window (pressure, temperature and precursor flows) and its stability. However, as a result of c-plane growth, each material layer suffers from separation of electrons and holes to opposite faces of the layers. Furthermore, strain at the interfaces between adjacent layers gives rise to piezoelectric polarization, causing further charge separation. Such polarization effects decrease the likelihood of electrons and holes recombining, causing the device to perform poorly.

Description

Researchers at the University of California, Santa Barbara have developed methods for successfully growingplanar non-polar m-plane gallium nitride (GaN) with metalorganic chemical vapor deposition (MOCVD). These methods takes advantage of non-polar nature of m-plane GaN to eliminate polarization fields, and gives rise to flexibility in growth variables, such as temperature, pressure and precursor flows, utilizing the advantage of m-GaN stability during growth.

Advantages

• Eliminates polarization fields

• More flexibility in growth variables

Applications

Growth of non-polar GaN films

GaN-based devices

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Patent Status