A safe etching technique for use with (Al, In, Ga)N materials.
Current nitride etching techniques face problems such as damaging sensitive device layers, alteration of quantum well layers and large scale roughening of the etched surface.
Researchers at the University of California, Santa Barbara have developed a safe etching technique for use with (Al, In, Ga)N materials. The method is designed to fabricate free-standing thin nitride wafers or to remove material from thin nitride membranes. It can remove desired material without damaging sensitive device layers, including quantum well layers, and can facilitate the formation of nitride microcavity structures. The technique is applicable to nitride-based optoelectronic and semiconductor devices.
This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
|United States Of America||Issued Patent||7,795,146||09/14/2010||2005-509|
GaN, Gallium Nitride, indssl, indled, indpec, cenIEE, indfeat