Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD

Brief Description

A method for enhancing growth of semipolar (Al,In,Ga,B)N films for high-performance nitride-based optoelectronics and semiconductor devices.

Background

Existing methods of producing semipolar nitride films are extremely cumbersome and yield areas too small for device fabrication, thus there is a need for a new method that overcomes these obstacles in order to take advantage of the performance benefits of using semipolar nitride films.

Description

Researchers at the University of California, Santa Barbara have developed a method for enhancing growth of semipolar (Al,In,Ga,B)N films via metalorganic chemical vapor deposition (MOCVD). This method involves growth of nitride films on the semipolar {11 22} plane to overcome performance limitations associated with the polar c-plane, thus increasing device efficiencies. It yields samples grown on 2-inch diameter substrates, compared with areas of a few micrometers accomplished using existing methods. This method also results in a planar film surface, few surface undulations, and a reduced number of crystallographic defects, all necessary features to support application to state-of-the-art nitride semipolar electronic devices.

Advantages

• Large available surface area (samples grown on 2-inch diameter substrates, compared to areas on the order of a few micrometers achieved by prior art)

• Increased device efficiencies compared to c-plane devices

• Planar film surface

• Minimized surface undulations and crystallographic defects

Applications

• High-Performance Nitride-Based Optoelectronics and Semiconductor Devices

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Patent Status