Highly-efficient cleaved facet edge-emitting laser diodes grown on semipolar gallium nitride substrates.
Current group-III nitride lasers are grown on polar c-plane substrates and usually employ dry-etched facets, which are inherently rough. Since these devices suffer from reduced efficiency due to high polarization-induced electric fields and scattering loss, there is a need for a high-efficiency laser diode that avoids these shortcomings.
Researchers at the University of California, Santa Barbara have developed cleaved facet edge-emitting laser diodes grown on semipolar gallium nitride substrates. Because the devices are grown on a semipolar orientation, they have lower thresholds and higher efficiencies. The efficiency is further increased due to smooth, low loss cavities achieved by cleaved mirror facets. These devices are applicable to high brightness lighting displays, high resolution printers, projection displays, next generation DVD players, medical imaging, and efficient solid-state lighting.
This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
|United States Of America||Issued Patent||8,541,869||09/24/2013||2007-423|
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