UNIVERSITY of CALIFORNIA, SANTA BARBARA

Brief Description

Highly-efficient cleaved facet edge-emitting laser diodes grown on semipolar gallium nitride substrates.

Background

Current group-III nitride lasers are grown on polar c-plane substrates and usually employ dry-etched facets, which are inherently rough. Since these devices suffer from reduced efficiency due to high polarization-induced electric fields and scattering loss, there is a need for a high-efficiency laser diode that avoids these shortcomings.

Description

Researchers at the University of California, Santa Barbara have developed cleaved facet edge-emitting laser diodes grown on semipolar gallium nitride substrates. Because the devices are grown on a semipolar orientation, they have lower thresholds and higher efficiencies. The efficiency is further increased due to smooth, low loss cavities achieved by cleaved mirror facets. These devices are applicable to high brightness lighting displays, high resolution printers, projection displays, next generation DVD players, medical imaging, and efficient solid-state lighting.

Advantages

• Lower thresholds and higher efficiencies than standard polar c-plane laser diodes

• May offer higher wall-plug efficiencies than can be achieved with LEDs

• Smooth low loss mirror facets with high reflectivity

Applications

• High Brightness Lighting Displays

• High Resolution Printers

• Projection Displays

• Next Generation DVD Players

• Medical Imaging

• Efficient Solid-State Lighting

This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

Patent Status

Patent Pending

Inventors

• DenBaars, Steven P.
• Nakamura, Shuji
• Speck, James S.
• Tyagi, Anurag

Other Information

Contact

Shaun R. Juncal / juncal@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #21809.

ADDITIONAL TECHNOLOGIES BY THESE INVENTORS

• Fabrication Of High Quality P-Type GaN and Alloys by Preventing Hydrogen Incorporation
• Self-Assembled Nano-Cluster And Quantum Dot Lattices
• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Nonpolar (Al, B, In, Ga)N Quantum Well Design
• Electrically-Pumped Vertical-Cavity Surface-Emitting Laser (VCSEL)
• Improved Manufacturing of Semiconductor Lasers
• High Efficiency LED With Emitters Within Structured Materials
• Asymmetrically Cladded Laser Diode with Improved Performance
• Yellow-Emitting Phosphors for White LEDs
• Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• Device Structure for High Efficiency LED
• Nitride-Based LED with Optimized Efficiency
• Selective Dry Etching of N-Face (Al, In, Ga)N Heterostructures
• High-Efficiency, White, Single, or Multi-Color LED by Photon Recycling
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Mirrorless LED with High Luminous Efficiency
• Method for Producing GaN Substrates for Electronic and Optoelectronic Devices
• Hybrid Inorganic Light-Emitting Devices
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Method for Growing High-Quality Group III-Nitride Crystals
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
• Long Wavelength Nonpolar and Semipolar Nitride-Based Laser Diodes
• Semipolar III-Nitride Laser Diodes with Etched Mirrors
• Fabrication of Optoelectronic Devices with Embedded Void-Gap Structures
• Method for Making a High Performance Vertical Cavity Surface Emitting Laser
• Use of Flux Method to Grow Seed Crystals for Ammonothermal Growth of Group-III Nitride Crystal Crystal Growth
• Method for Ammonothermal Growth of Highly Pure Group-III Nitrides
• LED Structure with Low Efficiency Droop for High-Current Applications
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Low Carrier Loss Device Structure for High Performance Green LEDs
• High Efficiency Group-III Nitride/Non-Group-III Nitride Tandem Solar Cells
• Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
• Phosphor-Free White Light Source
• Method for Wafer Bonding for Optoelectronic Applications
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Wafer Bonding For Highly Efficient Nitride-Based LEDs
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• High Efficiency and High Brightness LEDs for Various Lighting Applications
• Photoelectrochemical Etching for Laser Facets
• Enhancement Of Thermoelectric Properties Through Polarization Engineering
• Improved Gallium Nitride (GaN) Thermoelectric Devices
• Two dimensionally relaxed III-N buffer layers for LEDs
• Novel Layer Structure for Semipolar InGaN/GaN LEDs and Laser Diodes
• Efficient High-Power, Laser-Driven White Lighting Device
• GaN-based Green/Red Light-Emitting Diodes With Low Voltage
• Outdoor Street Light Fixture with Novel Laser Diode Light Source
• Improved LED Performance via Optimized Polarization Properties
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• Controlling Contact Resistivity of Transparent Conductive Layers of Optoelectronic Devices

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