UNIVERSITY of CALIFORNIA, SANTA BARBARA

Brief Description

A method for growing an improved quality device by depositing a low temperature magnesium doped nitride semiconductor thin film.

Background

Magnesium doped gallium nitride has been extensively used in nitride based LEDs, but requires high deposition temperatures. Indium nitride has a high volatility and readily evaporates out of the InGaN films when exposed to a high enough temperature or a low temperature for an extended period of time. This time and temperature value is commonly referred to as the material's thermal budget. As a result, there is a need for improved methods for the growth of low temperature magnesium doped nitride planar films, wherein the thermal budget of the previously deposited indium nitride containing multiple quantum wells is considerably reduced.

Description

Researchers at the University of California, Santa Barbara have developed a method for growing an improved quality device by depositing a low temperature magnesium doped nitride semiconductor thin film. This process includes using deposition temperature for the magnesium doped GaN film that is lower than the one used for the deposition of the multi quantum well. This results in a significant increase in the output power of a nitride LED.

Advantages

• Reduced damages to the multi quantum well materials

• Increased output power of nitride LED and improved device performance

Applications

• Nitride LEDs and Laser Diodes  

This technology is available for a non-exclusive license. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

Patent Status

Inventors

• DenBaars, Steven P.
• Iza, Michael
• Nakamura, Shuji
• Sato, Hitoshi

Other Information

Contact

Shaun R. Juncal / juncal@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #21919.

ADDITIONAL TECHNOLOGIES BY THESE INVENTORS

• Fabrication Of High Quality P-Type GaN and Alloys by Preventing Hydrogen Incorporation
• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Nonpolar (Al, B, In, Ga)N Quantum Well Design
• Electrically-Pumped Vertical-Cavity Surface-Emitting Laser (VCSEL)
• Improved Manufacturing of Semiconductor Lasers
• High Efficiency LED With Emitters Within Structured Materials
• LED with Reduced Droop Effect for High-Power Applications
• Asymmetrically Cladded Laser Diode with Improved Performance
• Yellow-Emitting Phosphors for White LEDs
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• Device Structure for High Efficiency LED
• Nitride-Based LED with Optimized Efficiency
• Selective Dry Etching of N-Face (Al, In, Ga)N Heterostructures
• High-Efficiency, White, Single, or Multi-Color LED by Photon Recycling
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Mirrorless LED with High Luminous Efficiency
• Hybrid Inorganic Light-Emitting Devices
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Method for Growing High-Quality Group III-Nitride Crystals
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
• Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
• Long Wavelength Nonpolar and Semipolar Nitride-Based Laser Diodes
• Semipolar III-Nitride Laser Diodes with Etched Mirrors
• Method for Making a High Performance Vertical Cavity Surface Emitting Laser
• Use of Flux Method to Grow Seed Crystals for Ammonothermal Growth of Group-III Nitride Crystal Crystal Growth
• Method for Ammonothermal Growth of Highly Pure Group-III Nitrides
• LED Structure with Low Efficiency Droop for High-Current Applications
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Low Carrier Loss Device Structure for High Performance Green LEDs
• High Efficiency Group-III Nitride/Non-Group-III Nitride Tandem Solar Cells
• Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
• Phosphor-Free White Light Source
• Method for Wafer Bonding for Optoelectronic Applications
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Wafer Bonding For Highly Efficient Nitride-Based LEDs
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• High Efficiency and High Brightness LEDs for Various Lighting Applications
• Photoelectrochemical Etching for Laser Facets
• Enhancement Of Thermoelectric Properties Through Polarization Engineering
• Improved Gallium Nitride (GaN) Thermoelectric Devices
• Two dimensionally relaxed III-N buffer layers for LEDs
• Novel Layer Structure for Semipolar InGaN/GaN LEDs and Laser Diodes
• Efficient High-Power, Laser-Driven White Lighting Device
• GaN-based Green/Red Light-Emitting Diodes With Low Voltage
• Outdoor Street Light Fixture with Novel Laser Diode Light Source
• Improved LED Performance via Optimized Polarization Properties
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• Controlling Contact Resistivity of Transparent Conductive Layers of Optoelectronic Devices

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