UNIVERSITY of CALIFORNIA, SANTA BARBARA

Brief Description

Background

As bulk GaN crystals are not widely available, current devices are grown on foreign substrates heteroepitaxially. The nature of heteroepitaxial growth leads to significant defect densities, most prominently in the form of threading dislocations. Researchers are continually trying to reduce defect density. In c-plane nitride growth, as well as other semiconductor materials systems, the threading dislocation defects predominantly propagate along the principal growth direction. As such, laterally growing polar and nonpolar nitrides tend to exhibit reduced defect densities.

Description

Researchers at the University of California, Santa Barbara have developed a novel method for defect reduction via lateral growth of semipolar nitrides. Lateral growth can be used to reduce defect density in semipolar nitride films by such growth techniques as LEO, SLEO, cantilever epitaxy, and nanomasking. The lateral growth can also be performed multiple times to further decrease the dislocation density.

Advantages

• Reduced defect density in semipolar nitride films

• Can be performed multiple times to further decrease dislocation density

Applications

• Growth of semipolar nitride films  

This technology is available for a non-exclusive license. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

Patent Status

Inventors

• Baker, Troy J.
• Haskell, Benjamin A.
• Nakamura, Shuji
• Speck, James S.

Other Information

Contact

Shaun R. Juncal / juncal@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #21918.

ADDITIONAL TECHNOLOGIES BY THESE INVENTORS

• Self-Assembled Nano-Cluster And Quantum Dot Lattices
• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Electrically-Pumped Vertical-Cavity Surface-Emitting Laser (VCSEL)
• Improved Manufacturing of Semiconductor Lasers
• Asymmetrically Cladded Laser Diode with Improved Performance
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• Device Structure for High Efficiency LED
• Nitride-Based LED with Optimized Efficiency
• Selective Dry Etching of N-Face (Al, In, Ga)N Heterostructures
• High-Efficiency, White, Single, or Multi-Color LED by Photon Recycling
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Mirrorless LED with High Luminous Efficiency
• Method for Producing GaN Substrates for Electronic and Optoelectronic Devices
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Method for Growing High-Quality Group III-Nitride Crystals
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
• Long Wavelength Nonpolar and Semipolar Nitride-Based Laser Diodes
• Semipolar III-Nitride Laser Diodes with Etched Mirrors
• Fabrication of Optoelectronic Devices with Embedded Void-Gap Structures
• Use of Flux Method to Grow Seed Crystals for Ammonothermal Growth of Group-III Nitride Crystal Crystal Growth
• Method for Ammonothermal Growth of Highly Pure Group-III Nitrides
• LED Structure with Low Efficiency Droop for High-Current Applications
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Low Carrier Loss Device Structure for High Performance Green LEDs
• High Efficiency Group-III Nitride/Non-Group-III Nitride Tandem Solar Cells
• Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
• Phosphor-Free White Light Source
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• Wafer Bonding For Highly Efficient Nitride-Based LEDs
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• High Efficiency and High Brightness LEDs for Various Lighting Applications
• Enhancement Of Thermoelectric Properties Through Polarization Engineering
• Improved Gallium Nitride (GaN) Thermoelectric Devices
• Two dimensionally relaxed III-N buffer layers for LEDs
• Novel Layer Structure for Semipolar InGaN/GaN LEDs and Laser Diodes
• GaN-based Green/Red Light-Emitting Diodes With Low Voltage
• Improved LED Performance via Optimized Polarization Properties

PEOPLE WHO VIEWED THIS ALSO VIEWED THESE TECHNOLOGIES BY OTHER INVENTORS

• Fabrication Of High Quality P-Type GaN and Alloys by Preventing Hydrogen Incorporation
• Method To Reduce The Dislocation Density In Group III- Nitride Films
• Novel Agents That Act In Steroid-Like Signaling Pathways In Medicine And Agriculture
• Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color LEDs
• Growth of Group III-Nitride Crystals using Supercritical Ammonia and Nitrogen