Researchers at the University of California, Davis have developed a reversed feedback amplifier design for enhanced mm-wave signal amplification.

A novel manufacturing process that shapes complex components from nanostructured materials using a combination of pressure, heat, and electricity.

Researchers at the University of California, Davis have developed a photothermal patterning flow cell that enables precise and efficient patterning of polymer films, compatible with existing cleanroom photolithography equipment.

Researchers at the University of California, Davis have developed an artificial intelligence machine that uses a combination of electronic neuromorphic circuits and photonic neuromorphic circuits.

Researchers at the University of California, Davis have developed a large-scale, energy-efficient, high-throughput, and compact tensorized optical neural network (TONN) exploiting the tensor-train decomposition architecture on an integrated III–V-on-silicon metal–oxide–semiconductor capacitor (MOSCAP) platform.

Researchers at the University of California, Davis, have developed a memory system that uses optical interconnects.

      Integrating microelectronics with microfluidics, especially those implemented in silicon-based CMOS technology, has driven the next generation of in vitro diagnostics. CMOS/microfluidics platforms offer (1) close interfaces between electronics and biological samples, and (2) tight integration of readout circuits with multi-channel microfluidics, both of which are crucial factors in achieving enhanced sensitivity and detection throughput. Conventionally bulky benchtop instruments are now being transformed into millimeter-sized form factors at low cost, making the deployment for Point-of-Care (PoC) applications feasible. However, conventional CMOS/microfluidics integration suffers from significant misalignment between the microfluidics and the sensing transducers on the chip, especially when the transducer sizes are reduced or the microfluidic channel width shrinks, due to limitations of current fabrication methods.       UC Berkeley researchers have developed a novel methodology for fabricating microfluidics platforms closely embedded within a silicon chip implemented in CMOS technology. The process utilizes a one-step approach to create fluidic channels directly within the CMOS technology and avoids the previously cited misalignment. Three types of structures are presented in a TSMC 180-nm CMOS chip: (1) passive microfluidics in the form of a micro-mixer and a 1:64 splitter, (2) fluidic channels with embedded ion-sensitive field-effect transistors (ISFETs) and Hall sensors, and (3) integrated on-chip impedance-sensing readout circuits including voltage drivers and a fully differential transimpedance amplifier (TIA). Sensors and transistors are functional pre- and post-etching with minimal changes in performance. Tight integration of fluidics and electronics is achieved, paving the way for future small-size, high-throughput lab-on-chip (LOC) devices.

      Molecular dynamics (MD) is a computational materials science modality widely used in academic and industrial settings for materials discovery and more. A critical aspect of modern MD calculations are machine learning interatomic potentials (MLIPs), which learn from reference quantum mechanical calculations and predict the energy and forces of atomic configurations quickly. MLIPs allow for more accurate and comprehensive exploration of material/molecular properties at-scale. However, state-of-the-art MLIP methods mostly use a short-range approximation, which may be sufficient for describing properties of homogeneous bulk systems but fail for liquid-vapor interfaces, dielectric response, dilute ionic solutions with Debye-Huckel screening, and interactions between gas phase molecules. Short-range MLIPs neglect all long-range interactions, such as Coulomb and dispersion interactions.      To address the current shortcoming, UC Berkeley researchers have developed a straightforward and efficient algorithm to account for long-range interactions in MLIPs. The algorithm can predict system properties including those with charged, polar or apolar molecular dimers, bulk water, and water-vapor interfaces. In these cases standard short-range MLIPs lead to unphysical predictions, even when utilizing message passing algorithms. The present method eliminates artifacts while only about doubling the computational cost. Furthermore, it can be incorporated into most existing MLIP architectures, including potentials based on local atomic environments such as HDNPP, Gaussian Approximation Potentials (GAP), Moment Tensor Potentials (MTPs), atomic cluster expansion (ACE), and MPNN (e.g., NequIP, MACE).

Brief description not available

Brief description not available

The present invention describes a novel method for acid-free pyrolytic synthesis of metal-nitrogen-carbon (M-N-C) catalysts for use in fuel cell/energy conversion applications. This method allows for rapid production of M-N-C catalysts that exhibit high activity and selectivity for CO2 electroreduction without needing harsh acids or bases.

Detection of single ionizing particles at rates approaching the gigahertz (GHz) range per channel has potential for applications in medical imaging and treatment as well as particle and nuclear physics. Current ionizing particle detection systems detect with maximum frame rates of ~500 MHz. As accelerators (e.g. XFELs) are upgraded to deliver trains of pulses at faster rates, detection systems will need to keep pace. Methods and devices that can detect at GHz rates will be required to meet the demands of modern societal needs and equipment.

Currently, thin films of single-crystalline (SC) alloy material are obtained using costly SC substrates made of a material chemically and physically compatible to that of a SC thin film that is deposited on the SC substrate. Formation of SC thin films of alloy materials on SC substrates are typically achieved through fairly expensive processes such as epitaxy. As a result, the use of a thin film of SC alloy materials or respective multiple thin films is contingent upon the availability of an appropriate SC substrate thereby severely limiting its utilization. Thus, there is a need for alternative methods of forming one or more thin films of SC alloy materials on arbitrary substrates. Crystallization of thin film materials by exploiting laser-induced crystallization has been advancing for the past four decades. This unique thin film technique has been predominantly used in processing thin film materials made of a single chemical element, with a significant emphasis on thin film materials comprised of a single chemical element like silicon (Si), used for the development of thin film transistors. While this approach has worked well for thin film materials comprised of a single chemical element like silicon (Si) it is not easily extended for use with thin film materials containing multiple chemical elements (e.g., metal oxides). For certain bulk manufacturing applications, it would be desirable to efficiently form thin structures on non-single-crystalline (NSC) substrates, such as glass, or on SC substrates that are highly-incompatible, such as silicon. For such applications, it is highly desirable that the treated SC alloy layer(s) have chemical compositions not significantly different from those of their original chemical compositions.

Prof. Sheldon Tan and his team have developed a new hierarchical learning-based electro-migration analysis method called HierPINN-EM to solve for multi-segment interconnects in VLSI chips. HierPINN-EM provides much better accuracy, faster training speeds and faster inference speeds compared to current state-of-the-art techniques. 

Brief description not available

Brief description not available

Brief description not available

Brief description not available

Brief description not available

Brief description not available

Brief description not available

Brief description not available

There has been a steady rise in interest in utilizing Fin high-electron mobility transistors HEMT devices to reduce the source access resistance and enhance the linearity but this linearity is not accessible at gate voltages beyond those at which the gate Schottky diode turns on (~2 V). All known transistor technologies are intrinsically non-linear. This non-linearity leads to signal distortion and power loss. Non-linearity is embodied in a decrease of the transistor current gain cut-off frequency, fT, and maximum oscillation frequency, fmax, with an increase in the drain current.  In contrast, the patented technology here is one of a new Fin MOS-HEMT device permits flexible engineering of the device threshold voltage in order to attain linearity over a wider VGS range (voltage between transistor gate and source (VGS) in excess of the threshold voltage (Vt) where Vt is defined as the minimum).

With the two-dimensional scaling of silicon field-effect transistors reaching fundamental limits, new functional improvements to transistors, as well as novel computing paradigms and vertical device integration at the architecture-level, are currently under intense study. Gate oxides play a critical role in this endeavor, as it’s a common performance booster for all devices, including silicon, new channel materials with potential for higher performance, and even materials suitable for three-dimensional integrated transistors.With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage. To pursue these performance gains, UC Berkeley researchers invented a new heterostructure insulator material where: 1) the material possesses specific ferroic order such as ferroelectricity/anti-ferroelectricity or a mixture of both; 2) the overall dielectric property such as the permittivity is determined by the stacking order of different layers rather than exact volume fraction of the constituents; and 3) the material is composed of one or several repetition of ultra thin superlattice periods ranging from a few angstroms to 3 nm.

Brief description not available