Bonding of Heterogeneous Material for Improved Yield and Performance of Photonic Integrated Circuits
Brief Description
A new approach to photonic integrated circuit fabrication.
Background
Description
Researchers at the University of California, Santa Barbara have developed a new method of photonic integrated circuit fabrication where quantum dot III-V material and silicon waveguides are both grown on silicon substrates and are bonded using the wafer bonding process. Using identical substrates overcomes many of the limitations associated with substrate dissimilarity and also enables further processing of the III-V material before and/or after the wafer bonding. The process also shows potential for scalable, high-yield production of photonic integrated circuits.
Advantages
- Improved integrity of device
- Scalable wafer size
- No CTE mismatch of substrates
Applications
- Optoelectronic devices
- Semiconductor lasers
Patent Status
| Country | Type | Number | Dated | Case |
| United States Of America | Issued Patent | 9,360,623 | 06/07/2016 | 2014-312 |
Contact
- Pasquale S. Ferrari
- ferrari@tia.ucsb.edu
- tel: View Phone Number.
Inventors
- Bovington, Jock T.
- Bowers, John E.
Other Information
Keywords
indadvmat, photonic integrated circuit, advanced materials, silicon photonics fabrication, quantum dot III-V, silicon waveguides, wafer bonding process
Additional Technologies by these Inventors
- Epitaxial Laser Integration on Silicon Based Substrates
- A Hybrid Silicon Laser-Quantum Well Intermixing Wafer Bonded Integration Platform
- Integrated Reconfigurable Circulator
- Magneto-Optic Modulator
- Quantum Dot Photonic Integrated Circuits
- Ring Resonator-Based Optical Isolator and Circulator
- Integrated Dielectric Waveguide and Semiconductor Layer
- Orthogonal Mode Laser Gyro
- Loss Modulated Silicon Evanescent Lasers
- Monolithically Integrated Laser-Nonlinear Photonic Devices
- Misfit Dislocation Free Quantum Dot Lasers
