A way to epitaxially grow quantum dot lasers on Si that are free of misfit dislocation.
Current quantum dot lasers have high densities of threading dislocations which result in misfit dislocations and poor lifetimes for the lasers. Research has focused on reducing threading dislocation densities however, misfit dislocations originate in plane meaning they can damage the quantum dot laser lifetime more so than the threading dislocations. Longer lifetimes are incredibly advantageous for commercial lasers. As a result, there exists a need in the field for a quantum dot laser that does not suffer from misfit dislocations.
Researchers at the University of California, Santa Barbara have developed a way to epitaxially grow quantum dot lasers on Si that are free of misfit dislocation. These misfit dislocation free quantum dot lasers offer an extended lifetime and improve device performance reliability while maintaining high performance levels.
|United States Of America||Issued Patent||10,761,266||09/01/2020||2016-912|
|United States Of America||Published Application||20-0185885||06/11/2020||2017-045|
Additional Patent Pending