Misfit Dislocation Free Quantum Dot Lasers

Tech ID: 29481 / UC Case 2018-608-0

Brief Description

A way to epitaxially grow quantum dot lasers on Si that are free of misfit dislocation.

Background

Current quantum dot lasers have high densities of threading dislocations which result in misfit dislocations and poor lifetimes for the lasers. Research has focused on reducing threading dislocation densities however, misfit dislocations originate in plane meaning they can damage the quantum dot laser lifetime more so than the threading dislocations. Longer lifetimes are incredibly advantageous for commercial lasers. As a result, there exists a need in the field for a quantum dot laser that does not suffer from misfit dislocations.

Description

Researchers at the University of California, Santa Barbara have developed a way to epitaxially grow quantum dot lasers on Si that are free of misfit dislocation. These misfit dislocation free quantum dot lasers offer an extended lifetime and improve device performance reliability while maintaining high performance levels. 

Advantages

  • Significantly improved laser lifetime 
  • Improved device reliability 
  • High performance maintained

Applications

  • Optical & Electronic 
  • Lasers

Patent Status

Country Type Number Dated Case
Patent Cooperation Treaty Published Application WO2017210300 12/07/2017 2016-912
 

Additional Patents Pending

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Inventors

Other Information

Keywords

indadvmat, quantum dot laser, Si

Categorized As