Currently, thin films of single-crystalline (SC) alloy material are obtained using costly SC substrates made of a material chemically and physically compatible to that of a SC thin film that is deposited on the SC substrate. Formation of SC thin films of alloy materials on SC substrates are typically achieved through fairly expensive processes such as epitaxy. As a result, the use of a thin film of SC alloy materials or respective multiple thin films is contingent upon the availability of an appropriate SC substrate thereby severely limiting its utilization. Thus, there is a need for alternative methods of forming one or more thin films of SC alloy materials on arbitrary substrates. Crystallization of thin film materials by exploiting laser-induced crystallization has been advancing for the past four decades. This unique thin film technique has been predominantly used in processing thin film materials made of a single chemical element, with a significant emphasis on thin film materials comprised of a single chemical element like silicon (Si), used for the development of thin film transistors. While this approach has worked well for thin film materials comprised of a single chemical element like silicon (Si) it is not easily extended for use with thin film materials containing multiple chemical elements (e.g., metal oxides). For certain bulk manufacturing applications, it would be desirable to efficiently form thin structures on non-single-crystalline (NSC) substrates, such as glass, or on SC substrates that are highly-incompatible, such as silicon. For such applications, it is highly desirable that the treated SC alloy layer(s) have chemical compositions not significantly different from those of their original chemical compositions.