Researchers at the University of California, Davis have developed a photothermal patterning flow cell that enables precise and efficient patterning of polymer films, compatible with existing cleanroom photolithography equipment.

Researchers at the University of California, Davis have developed an artificial intelligence machine that uses a combination of electronic neuromorphic circuits and photonic neuromorphic circuits.

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A fundamental scientific breakthrough is poised to fundamentally reshape the nature of light-matter interactions, particularly in silicon, resulting in dramatic enhancement of optical absorption and emission and potentially revolutionizing its applications in various fields.

The present invention describes a novel method for acid-free pyrolytic synthesis of metal-nitrogen-carbon (M-N-C) catalysts for use in fuel cell/energy conversion applications. This method allows for rapid production of M-N-C catalysts that exhibit high activity and selectivity for CO2 electroreduction without needing harsh acids or bases.

Currently, thin films of single-crystalline (SC) alloy material are obtained using costly SC substrates made of a material chemically and physically compatible to that of a SC thin film that is deposited on the SC substrate. Formation of SC thin films of alloy materials on SC substrates are typically achieved through fairly expensive processes such as epitaxy. As a result, the use of a thin film of SC alloy materials or respective multiple thin films is contingent upon the availability of an appropriate SC substrate thereby severely limiting its utilization. Thus, there is a need for alternative methods of forming one or more thin films of SC alloy materials on arbitrary substrates. Crystallization of thin film materials by exploiting laser-induced crystallization has been advancing for the past four decades. This unique thin film technique has been predominantly used in processing thin film materials made of a single chemical element, with a significant emphasis on thin film materials comprised of a single chemical element like silicon (Si), used for the development of thin film transistors. While this approach has worked well for thin film materials comprised of a single chemical element like silicon (Si) it is not easily extended for use with thin film materials containing multiple chemical elements (e.g., metal oxides). For certain bulk manufacturing applications, it would be desirable to efficiently form thin structures on non-single-crystalline (NSC) substrates, such as glass, or on SC substrates that are highly-incompatible, such as silicon. For such applications, it is highly desirable that the treated SC alloy layer(s) have chemical compositions not significantly different from those of their original chemical compositions.

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Gallium nitride is an essential semiconductor material that has shown great promise in electronic and optoelectronic applications. Its synthesis traditionally requires high temperatures (~300-1000℃) and/or pressures (~1-100MPa) in order to break the strong bond in molecular nitrogen. Manufacture of gallium nitride and similar semiconductor materials under these conditions is very expensive. Additionally, artificial nitrogen fixation in the form of ammonia manufacture is critical to the global food supply, but similarly requires very expensive high temperature and/or pressure synthesis. To address these problems, researchers at UC Berkeley have developed a method to synthesize gallium nitride from molecular nitrogen at approximately room temperature (30℃) and atmospheric pressure. This process can be accomplished more cheaply than traditional methods, using only standard reagents and equipment. Researchers have confirmed that prior to the synthesis of gallium nitride, atomic nitrogen is freely dissociated. This suggests that a similar method can be used in the manufacture of other nitride semiconductor materials, or even of nitrogenous substances such as ammonia.

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The inventors have discovered a new way to generate ultrafast back-gating, by leveraging the surface band bending inherent to many semiconductor materials. This new architecture consists of a standard bulk semiconductor material and a layered material on the surface. Optical pulses generate picosecond time-varying electric fields on the surface material. The inventors have successfully applied this method to a quantum well Rashba system, as this is considered today one of the most promising candidates for spin-based devices, such as the Datta Das spin-transistor. The technology can induce an ultrafast gate and drive time-dependent Rashba and quantum well dynamics never observed before, with switching faster than 10GHz. This approach minimizes lithography and will enable light-driven electronic and spintronics devices such as transistors, spin-transistors, and photo-controlled Rashba circuitry. This method can be applied with minimal effort to any two-dimensional material, for both exfoliated and molecular beam epitaxy grown samples. Electric field gating is one of the most fundamental tuning knobs for all modern solid-state technology, and is the foundation for many solid-state devices such as transistors. Current methods for in-situ back-gated devices are difficult to fabricate, introduce unwanted contaminants, and are unsuited for picosecond time-resolved electric field studies.  

With the two-dimensional scaling of silicon field-effect transistors reaching fundamental limits, new functional improvements to transistors, as well as novel computing paradigms and vertical device integration at the architecture-level, are currently under intense study. Gate oxides play a critical role in this endeavor, as it’s a common performance booster for all devices, including silicon, new channel materials with potential for higher performance, and even materials suitable for three-dimensional integrated transistors.With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage. To pursue these performance gains, UC Berkeley researchers invented a new heterostructure insulator material where: 1) the material possesses specific ferroic order such as ferroelectricity/anti-ferroelectricity or a mixture of both; 2) the overall dielectric property such as the permittivity is determined by the stacking order of different layers rather than exact volume fraction of the constituents; and 3) the material is composed of one or several repetition of ultra thin superlattice periods ranging from a few angstroms to 3 nm.

The inventors have developed a highly scalable multiplexed approach to increase the density of graphene nanoribbon- (GNR) based transistors. The technology forms a single device/chip (scale to 16,000 to >1,000,000 parallel transistors) on a single integrated circuit for single molecule biomolecular sensing, electrical switching, magnetic switching, and logic operations. This work relates to the synthesis and the manufacture of molecular electronic devices, more particularly sensors, switches, and complimentary metal-oxide semiconductor (CMOS) chip-based integrated circuits.Bottom-up synthesized graphene nanoribbons (GNRs) have emerged as one of the most promising materials for post-silicon integrated circuit architectures and have already demonstrated the ability to overcome many of the challenges encountered by devices based on carbon nanotubes or photolithographically patterned graphene. The new field of synthetic electronics borne out of GNRs electronic devices could enable the next generation of electronic circuits and sensors.  

Electromagnetic noise from surfaces is one of the limiting factors for the performance of solid state and trapped ion quantum information processing architectures. This noise introduces gate errors and reduces the coherence time of the systems. Accordingly, there is great commercial interest in reducing the electromagnetic noise generated at the surface of these systems.Surface treatment using ion bombardment has shown to reduce electromagnetic surface noise by two orders of magnitude. In this procedure ions usually from noble gasses are accelerated towards the surface with energies of 300eV to 2keV. Until recently, commercial ion guns have been repurposed for surface cleaning. While these guns can supply the ion flux and energy required to prepare the surface with the desired quality, they are bulky and limit the laser access, making them incompatible with the requirements for ion trap quantum computing.To address this limitation, UC Berkeley researchers have developed an ion gun that enables in-situ surface treatment without sacrificing high optical access, enabling in situ use with a quantum information processor.

Covalent organic frameworks (COFs) are 2D or 3D extended periodic networks assembled from symmetric, shape persistent molecular 5 building blocks through strong, directional bonds. Traditional COF growth strategies heavily rely on reversible condensation reactions that guide the reticulation toward a desired thermodynamic equilibrium structure. The requirement for dynamic error correction, however, limits the choice of building blocks and thus the associated mechanical and electronic properties imbued within the periodic lattice of the COF.   UC Berkeley researchers have demonstrated the growth of crystalline 2D COFs from a polydisperse macromolecule derived from single-layer graphene, bottom-up synthesized quasi one-dimensional (1D) graphene nanoribbons (GNRs). X-ray scattering and transmission electron microscopy revealed that 2D sheets of GNR-COFs self-assembled at a liquid-l quid interface stack parallel to the layer boundary and exhibit an orthotropic crystal packing. Liquid-phase exfoliation of multilayer GNR-COF crystals gave access to large area bilayer and trilayer cGNR-COF films. The functional integration of extended 1D materials into crystalline COFs greatly expands the structural complexity and the scope of mechanical and physical materials properties.

UCLA researchers in the Department of Mechanical & Aerospace Engineering have developed a novel boron arsenide (BAs) material that has an ultra-high thermal conductivity of 1300 W/mK and low cost of synthesis and processing.

UCLA researchers in the Department of Materials Science & Engineering have developed a new method of diamond deposition in integrated circuit vias for thermal dissipation.

UCLA researchers in the Department of Chemistry & Biochemistry have developed an approach for synthesizing nitrogen-containing polycyclic aromatic hydrocarbons with high yield.

A new approach to photonic integrated circuit fabrication.

A soft robot that can successfully burrow through sand and dirt, similar to a plant root.

UCLA researchers in the Department of Electrical Engineering and Computer Science have developed a novel way of implementing plastic synapses for neuromorphic systems applications by using charge-trapping advanced-node transistors.

Fabricating materials from naturally occurring proteins that are inherently biocompatible enables the resulting material to be easily integrated with many downstream applications, ranging from batteries to transistors. In addition, protein-based materials are also advantageous because they can be physically tuned and specifically functionalized. Inventors have developed protein-based material from structural proteins such as reflectins found in cephalopods, a molluscan class that includes cuttlefish, squid, and octopus. In a space dominated by artificial, man-made proton-conducting materials, this material is derived from naturally occurring proteins.