A Hybrid Silicon Laser-Quantum Well Intermixing Wafer Bonded Integration Platform

Tech ID: 27644 / UC Case 2007-591-0

Brief Description

An approach for integrating InP-based photonic devices together with low loss silicon photonics and complementary metal-oxide-semiconductor (CMOS) electronics.

Background

The integration of grating sections, optical gain regions, amplifiers, and photodetectors with electroabsorption gives rise to a variety of photonic integrated circuits such as tunable lasers, wavelength converters, pre-amplified photodectectors, and more. However, previous attempts at combining external modulation with silicon photonics have required time-consuming processes and/or multiple growth steps that result in higher product costs and poor device yield.

Description

Researchers at the University of California, Santa Barbara have developed an approach for integrating InP-based photonic devices together with low loss silicon photonics and complementary metal-oxide-semiconductor (CMOS) electronics. This method requires only standard lithography techniques and requires no discrete laser placement or metal-organic chemical vapor deposition (MOCVD), allowing for quicker fabrication with higher device yield.

Advantages

  • Enables a wide range of InP-based functionalities to be performed on silicon on insulator (SOI)-based platforms
  • Requires no discrete laser placement or MOCVD growth
  • Quicker device fabrication
  • Higher device yield

Applications

  • Modulators
  • Tunable lasers
  • Amplifiers
  • Photodetectors

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 9,020,002 04/28/2015 2007-591
United States Of America Issued Patent 8,559,478 10/15/2013 2007-591
 

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Keywords

InP, Hybrid Silicon Laser-Quantum Well Intermixing, SL-QWI, Photonics, Electroabsorption modulators, Wafer-bonded integration platforms, Lasers, Photodetectors, Amplifiers, CMOS, indmicroelec

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