An approach for integrating InP-based photonic devices together with low loss silicon photonics and complementary metal-oxide-semiconductor (CMOS) electronics.
The integration of grating sections, optical gain regions, amplifiers, and photodetectors with electroabsorption gives rise to a variety of photonic integrated circuits such as tunable lasers, wavelength converters, pre-amplified photodectectors, and more. However, previous attempts at combining external modulation with silicon photonics have required time-consuming processes and/or multiple growth steps that result in higher product costs and poor device yield.
Researchers at the University of California, Santa Barbara have developed an approach for integrating InP-based photonic devices together with low loss silicon photonics and complementary metal-oxide-semiconductor (CMOS) electronics. This method requires only standard lithography techniques and requires no discrete laser placement or metal-organic chemical vapor deposition (MOCVD), allowing for quicker fabrication with higher device yield.
|United States Of America||Issued Patent||9,020,002||04/28/2015||2007-591|
|United States Of America||Issued Patent||8,559,478||10/15/2013||2007-591|
InP, Hybrid Silicon Laser-Quantum Well Intermixing, SL-QWI, Photonics, Electroabsorption modulators, Wafer-bonded integration platforms, Lasers, Photodetectors, Amplifiers, CMOS, indmicroelec