Space Confined Polymer-Based Field Effect Transistors

Tech ID: 24594 / UC Case 2012-027-0


Professor Tolbert and colleagues have developed a polymer field effect transistor (FET) which employs a silica space-confinement structure to allow high carrier mobility. Prototype devices have demonstrated carrier mobilities of 10 cm2/Vs due to the device’s conduction along a polymer chain, rather than through an inter-chain network. Fabrication method can potentially be used to create transistors as narrow as 5 nm. This technology is well suited for applications in thin, flexible or low-cost devices, including displays, sensors, RFID and smart textiles.

Patent Status

Country Type Number Dated Case
Japan Issued Patent JP4708861 06/22/2011 2012-027
United States Of America Issued Patent 7,888,170 02/15/2011 2012-027


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  • Tolbert, Sarah H.

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Polymer-based field effect transistors

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