III-V compound semiconductor materials comprise elements from the third group (such as Al, Ga, and In) and fifth group (such as N, P, As, and Sb) of the periodic table. It has become a trend for both scientific research and semiconductor industry to combine the high-speed III-V semiconductors as both electronic and optoelectronic devices with low-cost Si circuitry. Integration of III-V functional devices on Si substrates was generally achieved by epitaxial growth of III-V material layers on Si, or by directly bonding of III-V semiconductor layers with the Si wafer. Most methods are not compatible with CMOS process due to their complicated procedures, or strong changes to the surface morphology of bonding layer, set aside the ability to arbitrarily define structures at any location and with any shape in a planar CMOS-like fabrication process. Presently need an improved way to:(1) integrate III-V semiconductors onto Si that is compatible with current CMOS fabrication procedure,(2) cause minimum or zero crystal defects to the bonded semiconductor layers, and(3) enable further fabrication of advanced functional devices using the bonded layers atop functional CMOS circuitry without degraded performance.