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Increased Light Extraction with Multistep Deposition of ZnO on GaN

A method of depositing ZnO on III-nitride materials using a multistep approach involving the deposition of a thin seed layer followed by the deposition of a thicker bulk layer.

Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide

A method of bonding transparent conductive oxides on III-nitride materials using wafer bonding techniques.

III-Nitride Tunnel Junction with Modified Interface

A method for improving the performance of semipolar III-nitride light-emitting devices. 

High-Efficiency Nitride-Based Nanorod LEDs

A robust and scalable process for the formation of nanorod arrays using nanosphere lithography.

High Light Extraction III-Nitride LEDs with Zinc Oxide

A method and structure for zinc oxide (ZnO)-deposited, high light-extracting III-nitride light-emitting diodes (LEDs).

Enhanced Light Extraction Using Colloid Lithography and Pattern Transfer Method

An easy and scalable process to pattern nano and/or micrometer-sized protuberances, also known as moth-eye arrays.

Nitride-Based LED Patterned with a Moth Eye Structure for Enhanced Light Extraction

An alternate method of patterning the surface of an LED for enhanced EXE. 

Apparatus and Method for 2D-based Optoelectronic Imaging

The use of electric fields for signaling and manipulation is widespread, mediating systems spanning the action potentials of neuron and cardiac cells to battery technologies and lab-on-a-chip devices. Current FET- and dye-based techniques to detect electric field effects are systematically difficult to scale, costly, or perturbative. Researchers at the University of California Berkeley have developed an optical detection platform, based on the unique optoelectronic properties of two-dimensional materials that permits high-resolution imaging of electric fields, voltage, acidity, strain and bioelectric action potentials across a wide field-of-view.

A New Methodology For 3D Nanoprinting

Researchers at the University of California, Davis have discovered a novel protocol to enable 3D printing with nanometer precision in all three dimensions using polyelectrolyte (PE) inks and atomic force microscopy.

Improved 3D Transistor

This case helps reinvent the transistor by building on the success of Berkeley’s 3D FinFET/Trigate/Tri-Gate methods and devices, with increased focus on the negative capacitance of the MOS-channel and ferroelectrics, and an unconventional effective oxide thickness approach to the gate dielectric. Proof of concept devices have been demonstrated at 30nm gate length and allow for use of thinner ferroelectric films than 2D negative capacitance transistors (e.g. see http://digitalassets.lib.berkeley.edu/techreports/ucb/text/EECS-2014-226.pdf ). The devices also performed at low operating voltage which lowers operating power.

Improved Anisotropic Strain Control in Semipolar Nitride Devices

A method to control the anisotrophy of strain in semipolar nitride-based active layers of optoelectronic devices while maintaining high device performance and efficiency.

Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates

A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates that uses an inert carrier gas such as N2.

Aluminum-cladding-free Nonpolar III-Nitride LEDs and LDs

A nonpolar III-nitride LED or LD that does not require any aluminum-containing cladding layers, because the quantum well active region is thick enough to function as an optical waveguide for the device.  

Highly Efficient, Heterogeneous, Hybrid-Integrated Optoelectronic Device Structure with Conductive and Low Loss Interface

Researchers at the University of California Davis have developed a fabrication technique that allows conductive wafer bonding between heterogeneous semiconductor materials with low optical losses and low electrical losses (low voltage and resistance).

Frequency Discriminator-based Phase Noise Filter (PNF) For Ultra-Clean LO/Clock

A delay line frequency discriminator and phase detector (PD)/charge pump (CP)-based phase noise filter (PNF) to realize phase noise suppression with wide bandwidth and high sensitivity features.

Tunable White Light Based on Polarization-Sensitive LEDs

White LEDs that can change their color-rendering properties through use of a polarizing element.

High Light Extraction Efficiency III-Nitride LED

A III-nitride light emitting diode (LED) with increased light extraction from having at least one textured surface of a semipolar or nonpolar plane of a III-nitride layer of the LED.

High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices

An (Al, Ga, In)N light emitting device in which high light generation efficiency occurs by fabricating the device using non-polar or semi-polar GaN crystals.

Electrochemical Technique for Accelerated Nitride Crystal Growth

A novel technique for increasing the nitrogen flux during nitride crystal growth in either bulk or thin-film form.

Reactor with Carbon Fiber Materials for Improved III-Nitride Growth

A reactor for growing high-quality group III-nitride crystals using carbon-carbon fiber composites in low oxygen ambient environments.

Methods of Forming Dopant-free, Asymmetric Heterocontact Structures

Worldwide photovoltaic capacity reached 178GW in 2014 and with an additional 55GW slated for deployment. With installed capacity projected to more than double by 2020, solar power is anticipated to become one of the largest sources of electricity, with solar photovoltaics representing about 16 percent of total. Current photovoltaic cell technology is based on crystalline silicon (c-Si) which generally uses doped homojunctions to create pathways of asymmetrical conductivity for electron and hole transport. This approach is limited by a host of interrelated optical, transport and recombination-based losses, most notably parasitic absorption and Auger recombination. Moreover, there are technological challenges and scaling problems associated with doping under high temperatures and with small contact fractions. To address these problems, researchers at the University of California, Berkeley, have developed advanced contact structures, which replace these doped regions, using alkali metal fluorides and metal oxides. Early lab results are reporting competitive cell efficiencies approaching 20%. These cells were fabricated using low-temperatures and no lithography, introducing potential for gains on both sides of the cost-to-performance ratio for c-Si photovoltaics.

Monolithic 3D Printing of Smart Objects

The number of interconnected sensors and actuators are expected to grow beyond thousands of units per person by 2020, and new manufacturing processes will be required for personalization and seamless integration of such devices into our surrounding objects. One major general challenge for manufacturers is with scaling production of mechanically sophisticated and tailored objects while maintaining or improving efficiency. 3D printing may be an excellent candidate for manufacturing at scale as it enables on-demand and rapid manufacturing of user-defined objects. However, traditional 3D approaches have a unique set of challenges due to incompatible processing approaches with metals with plastics. To address these challenges, researchers at UC Berkeley have developed novel 3D printing techniques for fully-integrated smart objects that embed liquid metal-based passive/active components and silicon integrated circuits to achieve greater system-level functionalities. For demonstration, UC researchers created a form-fitting glove with embedded programmable heater, temperature sensor, and the associated control electronics for thermotherapeutic treatment, specifically tailored to an individual’s body. These novel processes can enable assembly of electronic components into complex 3D architectures, which may provide a new platform for creating personalized smart objects in volume.

Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates

A method for growing planar nonpolar III-nitride films that have atomically smooth surfaces without any macroscopic surface undulations. 

Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices

A method to grow semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices on suitable substrates or planar templates in which a large area of the semipolar film is parallel to the substrate surface. 

Transparent Mirrorless (TML) LEDs

Minimizes the re-absorption of LED light by using transparent conductive oxide electrodes (ITO or ZnO) instead of mirrors. 

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