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Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates

A method for growing planar nonpolar III-nitride films that have atomically smooth surfaces without any macroscopic surface undulations. 

Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices

A method to grow semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices on suitable substrates or planar templates in which a large area of the semipolar film is parallel to the substrate surface. 

Transparent Mirrorless (TML) LEDs

Minimizes the re-absorption of LED light by using transparent conductive oxide electrodes (ITO or ZnO) instead of mirrors. 

Cross Reactive FET Array for Gas Mixture Detection

Conventional chemical sensor discriminates different analytes by rejecting the interference using selective decorations on the sensor body. A cross-reactive chemical sensor array discriminates different analytes by interpreting the collective sensor response using signal processing technique, and solves for the interference. Commercial sensor manufacturers search for the optimal choice of material, identifier and the signal processing technique to maximize the sensor performance in terms of chemical detection and discrimination. To address the need, researchers at the University of California, Berkeley, have developed a platform with 2D material incorporated in a cross-reactive field effect transistor (FET) sensor array. By examining and manipulating the properties of the sensor array, researchers have invented a low power, high efficiency, and versatile chemical sensing technology that is promising for commercialization.

Monolithic Integration of Ultra-Scaled High Performance Pin-Size Wearable Electronics

Wearable electronics for health monitoring have gained increased interest after conformal tattoo-like electronic sensors were co-integrated on elastomeric sheets.  One of the design requirements in such wearable electronics was to carefully adjust the effective Young’s modulus and bending stiffness of the resulting layered electronics, and this has restrained the compact integration of the electronic components because the single transistor elements had dimensions that were in millimeter scale. The promise of tattoo-like epidermal electronics has inspired a significant research effort to optimize the mechanics of these structures.

Method for Enhancing Growth of Semipolar Nitride Devices

A method for enhancing the growth of semipolar nitride films using either a buffer layer or a nucleation layer. 

Efficient Supercapacitator Charging Technique by a Hysteretic Charging Scheme

The technology is a hysteretic charging technique for efficient supercapacitor charging using low ambient power sources.With this technology user may extend the upper bound on the capacitance of supercapacitors.The technology features hysteretic control, a two stage supercapacitor system.Additionally, the technology features a pulse-frequency modulation (PFM) dc-dc boost converter.

Growth of High-Performance M-plane GaN Optical Devices

A method using MOCVD growth conditions to achieve high performance m-plane GaN optical devices, including LEDs and LDs. 

Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices

A method for fabricating high-quality indium-containing epitaxial layers, heterostructures, and devices based on InGaN growth on GaN substrates. 

Circuit Method for Enhanced Non-Contact Gesture Sensing in Capacitive Touch Screens

Researchers in the UCLA Department of Electrical Engineering have developed a complementary circuit method that provides functional extension to standard capacitive touch screens as non-contact, 3-D gesture sensors.

UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys

A device structure that can be used to create high-power and high-efficiency LEDs and LDs in the UV range of the spectrum. 

Optimization of Laser Bar Orientation for Nonpolar Laser Diodes

A method for the growth and fabrication of nonpolar laser diodes. 

Shape Algorithm for Inverse Directed Self-Assembly in Lithography

A computational technique that provides the ideal mask shape for the desired outcome, eliminating the time- and cost-intensive trial-and-error method. 

All Digital Synchronization for High Data Rate Wireless Networks

UCLA researchers have designed a simplified, all-digital synchronization circuit in the digital baseband receiver for high data rate wireless communication networks that consumes less power and can operate for a longer time than the standard design approach of using analog-to-digital converters.

Advanced All-Digital Phase-Locked Loop (ADPLL) Control System for Electronic Timing and Synchronization

Researchers in the UCLA Department of Electrical Engineering have designed an advanced all-digital phase-locked loop (ADPLL) control system that improves signal quality and reduces power consumption for signal timing and synchronization functions in high-performance telecommunications and radar electronics.

Fast Frequency Estimator

There are a variety of known approaches to estimate the frequency of a harmonic signal. The straightforward approach of directly measuring the time difference between zero crossings and the number of cycles per second is very sensitive to noise in the signals. Approaches to overcome this problem have been proposed, such as techniques based on the Fourier transform, correlation, least square error techniques, recursive algorithms, chirp Z transform (CZT), adaptive notch filters, and Kalman filtering that estimates instantaneous frequency of the signal. In such problems the filter must deal with the inherent nonlinearity and also with extremely high noise levels. The Kalman filter is a recursive stochastic technique that gives an optimal estimation of state variables of a given linear dynamic system from noisy measurements. The Kalman filter gives a time-varying gain, which is not amenable to frequency domain analysis.

Referenceless Clock Recovery Circuit with Wide Frequency Acquisition Range

The technology is a circuit that recovers a full-rate clock signal from a random digital data signal. Properties include: achieves frequency and phase locking in a single loop and a wide acquisition range.

GaN-based Vertical Metal Oxide Semiconductor and Junction Field Effect Transistors

The first true vertical GaN-based transistors, where gating is also performed on electrons traveling perpendicular to the surface in a vertical channel.

Method for Increasing GaN Substrate Area in Nitride Devices

A technique for producing large-area, high-quality freestanding non-polar and semi-polar nitride substrates via multiple slicing and growth steps. 

An All Solid-State Wafer Bonding Method Of III-V Materials On Si CMOS Using Patterned Metal Structures

III-V compound semiconductor materials comprise elements from the third group (such as Al, Ga, and In) and fifth group (such as N, P, As, and Sb) of the periodic table. It has become a trend for both scientific research and semiconductor industry to combine the high-speed III-V semiconductors as both electronic and optoelectronic devices with low-cost Si circuitry. Integration of III-V functional devices on Si substrates was generally achieved by epitaxial growth of III-V material layers on Si, or by directly bonding of III-V semiconductor layers with the Si wafer. Most methods are not compatible with CMOS process due to their complicated procedures, or strong changes to the surface morphology of bonding layer, set aside the ability to arbitrarily define structures at any location and with any shape in a planar CMOS-like fabrication process. Presently need an improved way to:(1) integrate III-V semiconductors onto Si that is compatible with current CMOS fabrication procedure,(2) cause minimum or zero crystal defects to the bonded semiconductor layers, and(3) enable further fabrication of advanced functional devices using the bonded layers atop functional CMOS circuitry without degraded performance.

Method for Growing Self-Assembled Quantum Dot Lattices

A method of producing controllable quantum dot lattices. 

Fabrication of Gallium Nitride Substrate

Brief description not available

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