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Improved Anisotropic Strain Control in Semipolar Nitride Devices

A method to control the anisotrophy of strain in semipolar nitride-based active layers of optoelectronic devices while maintaining high device performance and efficiency.

Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates

A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates that uses an inert carrier gas such as N2.

Aluminum-cladding-free Nonpolar III-Nitride LEDs and LDs

A nonpolar III-nitride LED or LD that does not require any aluminum-containing cladding layers, because the quantum well active region is thick enough to function as an optical waveguide for the device.  

Highly Efficient, Heterogeneous, Hybrid-Integrated Optoelectronic Device Structure with Conductive and Low Loss Interface

Researchers at the University of California Davis have developed a fabrication technique that allows conductive wafer bonding between heterogeneous semiconductor materials with low optical losses and low electrical losses (low voltage and resistance).

Frequency Discriminator-based Phase Noise Filter (PNF) For Ultra-Clean LO/Clock

A delay line frequency discriminator and phase detector (PD)/charge pump (CP)-based phase noise filter (PNF) to realize phase noise suppression with wide bandwidth and high sensitivity features.

Tunable White Light Based on Polarization-Sensitive LEDs

White LEDs that can change their color-rendering properties through use of a polarizing element.

High Light Extraction Efficiency III-Nitride LED

A III-nitride light emitting diode (LED) with increased light extraction from having at least one textured surface of a semipolar or nonpolar plane of a III-nitride layer of the LED.

High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices

An (Al, Ga, In)N light emitting device in which high light generation efficiency occurs by fabricating the device using non-polar or semi-polar GaN crystals.

Electrochemical Technique for Accelerated Nitride Crystal Growth

A novel technique for increasing the nitrogen flux during nitride crystal growth in either bulk or thin-film form.

Reactor with Carbon Fiber Materials for Improved III-Nitride Growth

A reactor for growing high-quality group III-nitride crystals using carbon-carbon fiber composites in low oxygen ambient environments.

Monolithic 3D Printing of Smart Objects

The number of interconnected sensors and actuators are expected to grow beyond thousands of units per person by 2020, and new manufacturing processes will be required for personalization and seamless integration of such devices into our surrounding objects. One major general challenge for manufacturers is with scaling production of mechanically sophisticated and tailored objects while maintaining or improving efficiency. 3D printing may be an excellent candidate for manufacturing at scale as it enables on-demand and rapid manufacturing of user-defined objects. However, traditional 3D approaches have a unique set of challenges due to incompatible processing approaches with metals with plastics. To address these challenges, researchers at UC Berkeley have developed novel 3D printing techniques for fully-integrated smart objects that embed liquid metal-based passive/active components and silicon integrated circuits to achieve greater system-level functionalities. For demonstration, UC researchers created a form-fitting glove with embedded programmable heater, temperature sensor, and the associated control electronics for thermotherapeutic treatment, specifically tailored to an individual’s body. These novel processes can enable assembly of electronic components into complex 3D architectures, which may provide a new platform for creating personalized smart objects in volume.

Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates

A method for growing planar nonpolar III-nitride films that have atomically smooth surfaces without any macroscopic surface undulations. 

Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices

A method to grow semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices on suitable substrates or planar templates in which a large area of the semipolar film is parallel to the substrate surface. 

Transparent Mirrorless (TML) LEDs

Minimizes the re-absorption of LED light by using transparent conductive oxide electrodes (ITO or ZnO) instead of mirrors. 

Cross Reactive FET Array for Gas Mixture Detection

Conventional chemical sensor discriminates different analytes by rejecting the interference using selective decorations on the sensor body. A cross-reactive chemical sensor array discriminates different analytes by interpreting the collective sensor response using signal processing technique, and solves for the interference. Commercial sensor manufacturers search for the optimal choice of material, identifier and the signal processing technique to maximize the sensor performance in terms of chemical detection and discrimination. To address the need, researchers at the University of California, Berkeley, have developed a platform with 2D material incorporated in a cross-reactive field effect transistor (FET) sensor array. By examining and manipulating the properties of the sensor array, researchers have invented a low power, high efficiency, and versatile chemical sensing technology that is promising for commercialization.

Monolithic Integration of Ultra-Scaled High Performance Pin-Size Wearable Electronics

Wearable electronics for health monitoring have gained increased interest after conformal tattoo-like electronic sensors were co-integrated on elastomeric sheets.  One of the design requirements in such wearable electronics was to carefully adjust the effective Young’s modulus and bending stiffness of the resulting layered electronics, and this has restrained the compact integration of the electronic components because the single transistor elements had dimensions that were in millimeter scale. The promise of tattoo-like epidermal electronics has inspired a significant research effort to optimize the mechanics of these structures.

Method for Enhancing Growth of Semipolar Nitride Devices

A method for enhancing the growth of semipolar nitride films using either a buffer layer or a nucleation layer. 

Efficient Supercapacitator Charging Technique by a Hysteretic Charging Scheme

The technology is a hysteretic charging technique for efficient supercapacitor charging using low ambient power sources.With this technology user may extend the upper bound on the capacitance of supercapacitors.The technology features hysteretic control, a two stage supercapacitor system.Additionally, the technology features a pulse-frequency modulation (PFM) dc-dc boost converter.

Growth of High-Performance M-plane GaN Optical Devices

A method using MOCVD growth conditions to achieve high performance m-plane GaN optical devices, including LEDs and LDs. 

Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices

A method for fabricating high-quality indium-containing epitaxial layers, heterostructures, and devices based on InGaN growth on GaN substrates. 

UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys

A device structure that can be used to create high-power and high-efficiency LEDs and LDs in the UV range of the spectrum. 

Optimization of Laser Bar Orientation for Nonpolar Laser Diodes

A method for the growth and fabrication of nonpolar laser diodes. 

All Digital Synchronization for High Data Rate Wireless Networks

UCLA researchers have designed a simplified, all-digital synchronization circuit in the digital baseband receiver for high data rate wireless communication networks that consumes less power and can operate for a longer time than the standard design approach of using analog-to-digital converters.

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