III-N Based Material Structures and Circuit Modules Based on Strain Management

Tech ID: 31884 / UC Case 2017-99F-0

Background

Current state-of-the-art optoelectronic devices are based on either lattice-matched or biaxially strained wurtzite III-nitride materials. Their performance is limited by the low hole conductivity in group-III nitride materials, which is due in part to the high relative hole mass in nitrides, resulting in a very low hole mobility. Decreasing the holes’ effective mass results in significant performance improvements in photonic devices.

Description

Researchers at the University of California, Santa Barbara have incorporated strain engineering into electronic and photonic nitride heterostructures, resulting in an upward movement of the light hole band and formation of holes with a relative mass less than electrons. This technology enables significant improvement to the performance of hole-based transistors and enables the fabrication of integrated circuits combining electron and hole-based transistors. In addition, the technology enables improvements to the performance of optoelectronic devices such as LEDs, but especially lasers, through a significant reduction in the threshold carrier density. By utilizing strain as proposed by this technology, the performance of all p-type and n-type III-nitride electronic devices can be enhanced.

Advantages

  • Hole Mobility increased by 4x in initial experiments
  • Enables GaN based CMOS
  • High Frequency and high current devices

Applications

  • III-nitride materials
  • Materials in all polarities and crystal planes
  • Push-pull amplifiers
  • Wideband amplifiers
  • Mixed signal architectures
  • Laser diodes
  • LEDs

Patent Status

Country Type Number Dated Case
Patent Cooperation Treaty Reference for National Filings WO2020149922 07/23/2020 2017-99F
 

Patent Pending

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Keywords

strain management, circuit modules, transistors, laser diode, LEDs, amplifiers

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