Trans-capacitance in Designed Ferroelectrics

Tech ID: 34643 / UC Case 2026-117-0

Patent Status

Patent Pending

Brief Description

Traditional electronic materials typically exhibit electrical properties aligned in the same direction as the applied electric field. However, researchers at UC Berkeley have developed a new class of Aurivillius phase layered ferroelectric materials that enable unique "trans-capacitance" effects. These materials possess a coexistence of in-plane and out-of-plane polarization.

Suggested uses

  • High-Density Memory Storage: Developing next-generation non-volatile memory devices that leverage multi-axis polarization for higher data density.

  • Cross-Coupled Electronic Sensors: Creating sensors that can detect electrical signals in one orientation while being powered or controlled from another.

  • Micro-Electromechanical Systems: Implementing specialized actuators and transducers that require precise, directional control of electrical energy.

  • Advanced Integrated Circuits: Designing compact capacitors and coupling components that reduce interference by separating signal and field directions.

  • Quantum Computing Hardware: Providing stable, directionally tunable ferroelectric layers for high-precision control in low-temperature electronic environments.

Advantages

  • Unique Electrical Coupling

  • High Design Versatility: Offers engineers more options for routing electrical signals and managing fields within small-scale devices.

  • Compact Device Integration: Enables more complex circuit architectures in a smaller footprint by allowing fields to cross without interference.

  • Robust Polarization.

  • Material Precision: The specific layering of the ferroelectric material allows for predictable and repeatable trans-capacitance values.

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Inventors

  • Ramesh, Ramamoorthy

Other Information

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