Methods for Locally Changing the Electric Field Distribution in Electron Devices

Tech ID: 29539 / UC Case 2006-129-0

Brief Description

A surface treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions.


Field effect transistors are commonly used as power amplifiers, where the maximum output power is proportional to the maximum current of the device and to the maximum voltage swing at the drain electrode. To maximize the output power of a transistor, both the drain current and the voltage swing need to be increased. Current technology is not suited for the break down of high power application to maximize the current of the device. In order to increase the breakdown voltage, the electric field needs to be spread out. Current processes for doing this, recess engineering and plated structures, present several problems: introduction of parasitic resistances, unavailability of resources, increase of leakages, inability to function with high frequency devices. New techniques are needed for locally changing the electric field distribution.


Researchers at the University of California, Santa Barbara developed a surface treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions. The ability to locally change the electric field distribution can improve the performance of different kinds of devices, including high electron mobility transistors (HEMTs), light emitting diodes (LEDs), and ultraviolet detectors. In HEMTs, the electric field shaping technology allows a reduction in the peak electric field in the channel, increasing the breakdown voltage and decreasing the gate leakage without harming the high-frequency transistor. For LEDs and lasers, the surface treatment can passivate lattice defect like dislocation, point defects, or sidewalls. This reduces leakage current and enhances the luminous efficiency of optical devices.


  • HEMTs - increase breakdown voltage & decrease the gate leakage safely
  • LED/Lasers - passivate lattice defect, reduces leakage current, enhances luminous efficiency of optical devices


  • LED
  • Lasers
  • HEMTs
  • Ultraviolet detections

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,114,717 02/14/2012 2006-129


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Other Information


LED, Light Emitting Diode, Lasers, HEMTs, Ultraviolet, indfeat, indled

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