Silicon photonics have wide applicability that includes data center interconnects, high-performance computing, space-based communications, and sensing. However, the development of silicon-photonic integrated circuits has been limited by a number of factors. The high cost of compound-semiconductor substrates as compared to silicon-based substrates, as well as the incurrence of extra processing steps and processing complexity associated with the integration, has restricted the desirability, scalability, and commercial success of conventional approaches for integrating compound semiconductor devices and silicon-based integrated-optics substrates. As a result, there remains a need for a simple, low-cost approach to integrating compound-semiconductor devices and silicon-based integrated-optic substrates to form practical, commercially viable silicon-photonics systems.
Researchers at the University of California, Santa Barbara have developed a low-cost, scalable approach to integrate compound-semiconductor lasers directly onto silicon-photonic circuits for efficient, commercially viable photonic systems. This technology provides a method to epitaxially grow quantum-dot compound-semiconductor lasers on silicon-on-insulator (SOI) substrates with surface waveguides. By directly depositing active optical devices on indirect-bandgap silicon substrates, the invention reduces cost and complexity compared to traditional heterogeneous or hybrid integration methods. This approach facilitates efficient optical coupling of the laser sources to silicon-based waveguides and supports scalable manufacturing of silicon-photonic integrated circuits, empowering applications in data communications, sensing, and high-performance computing.
| Country | Type | Number | Dated | Case |
| United States Of America | Issued Patent | 10,761,266 | 09/01/2020 | 2016-912 |
Semiconductors, Photonics, Lasers, indadvmat