A Double-Dose Ebeam Lithograpy Process

Brief Description

In electron beam lithography (EBL), after developing, the cross section of the resist has a parabolic undercut with a linewidth determined by the exposure in the top resist layer resulting in a typical linewidth of 100nm.

Full Description

Researchers at UC Irvine have developed a double-dose exposure process which easily achieves both higher linewidth resolution and a large undercut. Using this process, a top linewidth of 40 nm and undercut of more than 400nm can be achieved. This technique is important for electronic device applications such as the fabrication of single electron transistors.

Suggested uses

Single electron transistor fabrication

Advantages

Large undercut and fine linewidth