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A Discrete Color Approach for Stress Mitigation in Medical and Related Healthcare Applications as Applied to the Lighting Of Interiors and/or Medical Apparatus

The California Lighting Technology Center at UC Davis in collaboration with the Center for Mind and Brain have developed a novel lighting technology approach for stress recovery and stress mitigation.

Portable Cyber-Physical System For Real-Time Daylight Evaluation In Buildings

In developed countries, buildings demand a large percentage of a region's energy-generating requirements. This has led to an urgent need for efficient buildings with reduced energy requirements. In office buildings, lighting takes up 20% to 45% of the total energy consumption. Furthermore, the adoption of smart lighting control strategies such as daylight harvesting is shown to reduce lighting energy use by 30% to 50%.For most closed-loop lighting control systems, the real-time data of the daylight level at areas of interest (e.g., the office workbench) are the most important inputs. Current state-of-the-art solutions use dense arrays of luxmeters (photosensors) to monitor the daylight environment inside buildings. The luxmeters are placed on either workbenches, or ceilings and walls near working areas. Digital cameras are used in controlled laboratory environments and occasionally in common buildings to evaluate glare resulting from excessive daylight. The disadvantage of these sensor-based approaches is that they're expensive to install and commission. Additionally, the sample area of these sensors is limited to either the area of the luxmeters or the view of the cameras. Consequently, many sensors are needed to measure the daylight in a large office space.To address this situation, researchers at UC Berkeley developed a portable cyber-physical system for real time, daylight evaluation in buildings, agriculture facilities, and solar farms (collectively referred to as "structures").

Iii-N Transistor With Stepped Cap Layers

A new structure for III-N transistors that is able to maintain a high breakdown and operating voltage while improving the gain of the device.

Fabrication of Relaxed Semiconductor Films without Crystal Defects

A technique for making relaxed InGaN layers without crystal defects.

Improved Reliability & Enhanced Performance of III-Nitride Tunnel Junction Optoelectronic Devices

A structure for improving the performance and reliability of III-nitride based tunnel junction optoelectronic devices.

Methods for Locally Changing the Electric Field Distribution in Electron Devices

A surface treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions.

Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation

An m-plane VCSEL with an active region that has thick quantum wells and operation in continuous wave.

Achieving “Active P-Type Layer/Layers” In III-Nitride Epitaxial Or Device Structures Having Buried P-Type Layers

Researchers at the University of California, Santa Barbara have created both surface and buried p-type regions without the need for doping the materials with an acceptor.

Methods for Fabricating III-Nitride Tunnel Junction Devices

Methods of physical vapor deposition for III-nitride tunnel junction devices.

Two-Step Processing With Vapor Treatment Of Thin Films Of Organic-Inorganic Perovskite Materials

Prof. Yang and colleagues have developed a novel method of preparing organic-inorganic thin films using a solution process followed by vapor treatment, presenting a low-cost, high-performance solution method of producing optoelectronic devices.

Stand-Alone Ceramic Phosphor Composites for Laser-Excited Solid-State White Lighting

A method for generating a stand-alone ceramic phosphor composite for use in solid state white light generating devices that successfully reduces the operating temperature of the phosphor material by 50%, increases lumen output, reduces cost of materials, and decreases preparation time.

Improved Anisotropic Strain Control in Semipolar Nitride Devices

A method to control the anisotrophy of strain in semipolar nitride-based active layers of optoelectronic devices while maintaining high device performance and efficiency.

Aluminum-cladding-free Nonpolar III-Nitride LEDs and LDs

A nonpolar III-nitride LED or LD that does not require any aluminum-containing cladding layers, because the quantum well active region is thick enough to function as an optical waveguide for the device.  

Tunable White Light Based on Polarization-Sensitive LEDs

Polarized white LEDs that can improve system efficiency by removing the need for an external polarizer.

High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices

An (Al, Ga, In)N light emitting device in which high light generation efficiency occurs by fabricating the device using non-polar or semi-polar GaN crystals.

Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices

A method to grow semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices on suitable substrates or planar templates in which a large area of the semipolar film is parallel to the substrate surface. 

Transparent Mirrorless (TML) LEDs

Minimizes the re-absorption of LED light by using transparent conductive oxide electrodes (ITO or ZnO) instead of mirrors. 

High-Intensity Solid State White Laser Diode

A solid state white lighting device consisting of a blue laser diode that emits light onto a single crystal phosphor, resulting in the emission of high-intensity white light. 

Method for Enhancing Growth of Semipolar Nitride Devices

A method for enhancing the growth of semipolar nitride films using either a buffer layer or a nucleation layer. 

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