Method For The Removal Of Devices Using The Trench

GaN substrates produce high quality III-nitride devices, but the substrate itself is expensive. Recycling the GaN layer would provide substantial cost-saving opportunities. Existing methods of removing devices from their substrates have demonstrated damage to the semiconductor layers or require an arduous etching process which dilutes the benefits of recycling the substrate at all.

Researchers at the University of California, Santa Barbara have developed a technique for removing III-nitride devices from their substrates with quick processing times and without significant damage to the devices. Before devices are grown on their substrate, the substrate is etched with another III-nitride layer to form trenches at the surface. A growth-restrict mask is deposited in the trenches so that the device layers do not coalesce with the substrate, and the substrate can be removed and recycled, reducing fabrication costs. This technique is applicable to multiple semiconductor device types.