Controlled Homo-Epitaxial Growth Of Hybrid Halide Crystals

Tech ID: 29459 / UC Case 2018-014-0


Organic-inorganic hybrid perovskites have demonstrated tremendous potential for next-generation electronic and optoelectronic devices due to their remarkable carrier dynamics. However, current studies of electronic and optoelectronic devices have been focused on polycrystalline materials, due to the challenges in synthesizing device compatible high quality single crystalline materials.

Technology Description

Researchers at UC San Diego have accomplished epitaxial growth of single crystal hybrid perovskites with controlled locations, morphologies, and orientations. The invention uses combined strategies of lithography, homoepitaxy, and low temperature solution methods. The crystals grow following a layer-by-layer model under controlled growth parameters. The process is robust and can be readily scaled up. The as-grown epitaxial single crystals were integrated in an array of light emitting diodes, each crystal as a pixel with enhanced quantum efficiencies. This capability opens up new opportunities for designing and fabricating a diverse range of high performance electronic and optoelectronic devices using crystalline hybrid perovskites.


Potential uses include, solar cell, light emitting diode, optical sensor


This invention represents the first patterned epitaxial growth of perovskite single crystals—a critical advancement in device integration of organic–inorganic hybrid perovskite materials.

State Of Development

A prototype has been developed.

Intellectual Property Info

This technology is patent pending and available for licensing and/or research sponsorship.

Related Materials

Patent Status

Patent Pending


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Other Information


Hybrid perovskites, hybrid halides, epitaxial growth, optoelectronics, organic-inorganic

Categorized As