UC San Diego inventors have developed error-correcting codes that allow for double- and triple-error correction. These codes can be applied to communications and memory storage, especially for write-once memory.
Additionally, UC San Diego inventors have developed codes for write-once memory that allows for two writes in an efficient manner. This invention can be applied to make more efficient use of flash memory, or other types of write-once memory devices.
The research behind these inventions can be reviewed at these links.
Country | Type | Number | Dated | Case |
United States Of America | Issued Patent | 9,141,474 | 09/22/2015 | 2010-327 |
United States Of America | Issued Patent | 8,977,936 | 03/10/2015 | 2010-326 |
WOM, flash memory, error correction