The inventors have discovered a new way to generate ultrafast back-gating, by leveraging the surface band bending inherent to many semiconductor materials. This new architecture consists of a standard bulk semiconductor material and a layered material on the surface. Optical pulses generate picosecond time-varying electric fields on the surface material. The inventors have successfully applied this method to a quantum well Rashba system, as this is considered today one of the most promising candidates for spin-based devices, such as the Datta Das spin-transistor. The technology can induce an ultrafast gate and drive time-dependent Rashba and quantum well dynamics never observed before, with switching faster than 10GHz. This approach minimizes lithography and will enable light-driven electronic and spintronics devices such as transistors, spin-transistors, and photo-controlled Rashba circuitry. This method can be applied with minimal effort to any two-dimensional material, for both exfoliated and molecular beam epitaxy grown samples. Electric field gating is one of the most fundamental tuning knobs for all modern solid-state technology, and is the foundation for many solid-state devices such as transistors. Current methods for in-situ back-gated devices are difficult to fabricate, introduce unwanted contaminants, and are unsuited for picosecond time-resolved electric field studies.