Thz Radiation Detector Using Bilayers Of Antiferromagnet And Heavy Metal Films

Tech ID: 32569 / UC Case 2019-105-0

Patent Status

Country Type Number Dated Case
United States Of America Published Application 2021-010917 04/15/2021 2019-105
 

Brief Description

Background

A practical implementation that can generate and detect electromagnetic radiation in the range 0.1 to 10 Terahertz is important in the advancement of biomedicine, security systems, ultrafast 5G & 6G communication, etc.

Technology

Prof. Jing Shi and his research team have developed a novel, compact and scalable semiconductor integrated circuit technology (IC) for Terahertz (THz) detection.

The innovation is a thin film device that is an Anti-Ferro Magnetic (AFM) and Heavy Metal (HM) bilayer - thin film structure that offers broad frequency tunability and scalability.

Benefits

  • Broader and tunable frequency responses beyond 1THz
  • Compact & Scalable
  • Ease of implementation in semiconductor IC technology
  • Cost effectiveResonabnt absorption of THz radiation

 

Implementation

Principle: resonant absorption of THz radiation drives spins in anti-ferromagnet (AFM) into precession, which is detected by heavy metal (HM) as a DC voltage.

Suggested uses

  • High resolution sensing & imaging applications in:
    • Medical & Biosciences
    • Security & screening systems
    • Non-destructive evaluation
  • Ultrafast  on chip communication for 5G/6G devices
  • Radio Astronomy & Cosmology

Advantages

  • Broader and tunable frequency responses beyond 1THz
  • Compact & Scalable
  • Ease of implementation in semiconductor IC technology
  • Cost effective

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