Chemical-Sensitive Field-Effect Transistor

Tech ID: 24184 / UC Case 2014-191-0

Patent Status

Country Type Number Dated Case
United States Of America Published Application 20170146483 05/27/2017 2014-191
China Published Application 106233464 12/14/2016 2014-191
Japan Published Application WO 2015/187878 12/10/2015 2014-191
Patent Cooperation Treaty Published Application WO2015187878 12/10/2015 2014-191
 

Brief Description

Conventional metal-oxide semiconductor field-effect transistor (MOSFET) technology consists of a source, drain, gate, and substrate. The chemical field-effect transistor (chemFET) is a type of a field-effect transistor acting as a chemical sensor, and is similar to MOSFET except for the gate structures. Modern industrial players seek higher-sensitivity technologies which are small, durable, efficient, and versatile. Further advances in these materials and structures could enable many new kinds of layered semiconductors and devices. To address need, researchers at the University of California, Berkeley, have developed chemical-sensitive field-effect transistor (CS-FET) platform technology. By exploiting selective thin films incorporated into the CS-FET, researchers have created chemical sensors with commercial promise in terms of chemical-versatility and low-power. 

Suggested uses

  • Chemical sensing and analysis
  • Gas sensing and analysis
  • Environmental monitoring

Advantages

  • Smaller footprint than conventional chemFET
  • High sensitivity
  • Leverages industry standard platforms and low-cost parts

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Inventors

  • Javey, Ali

Other Information

Keywords

metal oxide semiconductor field effect transistor, MOSFET, chemical field effect transistor, chemFET, chemical sensitive field effect transistor, CS-FET, chemical sensor, sensor, layered semiconductor, multi-gas, gas sensor, lab-on-chip

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