Chemical-Sensitive Field-Effect Transistor

Tech ID: 24184 / UC Case 2014-191-0

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 10,330,637 06/25/2019 2014-191

Brief Description

Conventional metal-oxide semiconductor field-effect transistor (MOSFET) technology consists of a source, drain, gate, and substrate. The chemical field-effect transistor (chemFET) is a type of a field-effect transistor acting as a chemical sensor, and is similar to MOSFET except for the gate structures. Modern industrial players seek higher-sensitivity technologies which are small, durable, efficient, and versatile. Further advances in these materials and structures could enable many new kinds of layered semiconductors and devices. To address need, researchers at the University of California, Berkeley, have developed chemical-sensitive field-effect transistor (CS-FET) platform technology. By exploiting selective thin films incorporated into the CS-FET, researchers have created chemical sensors with commercial promise in terms of chemical-versatility and low-power. 

Suggested uses

  • Chemical sensing and analysis
  • Gas sensing and analysis
  • Environmental monitoring


  • Smaller footprint than conventional chemFET
  • High sensitivity
  • Leverages industry standard platforms and low-cost parts

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Other Information


metal oxide semiconductor field effect transistor, MOSFET, chemical field effect transistor, chemFET, chemical sensitive field effect transistor, CS-FET, chemical sensor, sensor, layered semiconductor, multi-gas, gas sensor, lab-on-chip

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