Novel Current-Blocking Layer in High-Power Current Aperture Vertical Electron Transistors (CAVETs)
Brief Description
A process for creating a novel type of active current-blocking layer to allow the device current to only pass through the aperture.
Background
A Current Aperture Vertical Electron Transistor (CAVET) is a vertical device consisting of an n-type doped drift region to hold voltage and a horizontal region to carry current flowing from the source to the drain through an aperture. A current blocking layer is employed in such devices to block the current from flowing through any other direction but the aperture.
Description
Researchers at the University of California, Santa Barbara have developed a process for creating a novel type of active current-blocking layer to allow the device current to only pass through the aperture. This current-blocking layer effectively restricts the movement of current to only one direction to improve device functionality and reliability. The careful confinement of the device current allows for highly reliable and smooth high-frequency switching as well as high-power switching.
Advantages
- Simple device manufacturing process
- Improved device reliability and performance
- Smooth high-frequency switching
Applications
- High-power & high-frequency switching
Patent Status
| Country | Type | Number | Dated | Case |
| United States Of America | Issued Patent | 9,590,088 | 03/07/2017 | 2011-831 |
Contact
- Pasquale S. Ferrari
- ferrari@tia.ucsb.edu
- tel: View Phone Number.
Inventors
- Ben Yaacov, Ilan
- Chowdhury, Srabanti
- Hurni, Christophe
- Mishra, Umesh K.
- Yeluri, Ramya
Other Information
Keywords
CAVET, indcircuit, indssl, indpowerelec, indaltenergy, indmicroelec, indfeat
Categorized As
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