P-Type Zinc Oxide Nanowires

Tech ID: 19932 / UC Case 2007-086-0

Technology Description

Researchers at UC San Diego have developed a method of p-doping zinc oxide nanostructures. This wideband gap semiconductor has been difficult to p-dope. The realization of p-doping enables complimentary doping and novel electronic devices, such as transistors, vertical FETs, possibly UV, visible, and white LEDs.

Intellectual Property Info

The method is in early-stage development and is available for licensing. Patents pending.

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,426,224 04/23/2013 2007-086


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