P-Type Zinc Oxide Nanowires
Tech ID: 19932 / UC Case 2007-086-0
Technology Description
Researchers at UC San Diego have developed a method of p-doping zinc oxide nanostructures. This wideband gap semiconductor has been difficult to p-dope. The realization of p-doping enables complimentary doping and novel electronic devices, such as transistors, vertical FETs, possibly UV, visible, and white LEDs.
Intellectual Property Info
The method is in early-stage development and is available for licensing. Patents pending.
Patent Status
| Country | Type | Number | Dated | Case |
| United States Of America | Issued Patent | 8,426,224 | 04/23/2013 | 2007-086 |
Contact
- University of California, San Diego Office of Innovation and Commercialization
- innovation@ucsd.edu
- tel: View Phone Number.
