Researchers at UC San Diego have developed a method of p-doping zinc oxide nanostructures. This wideband gap semiconductor has been difficult to p-dope. The realization of p-doping enables complimentary doping and novel electronic devices, such as transistors, vertical FETs, possibly UV, visible, and white LEDs.
The method is in early-stage development and is available for licensing. Patents pending.
|United States Of America||Issued Patent||8,426,224||04/23/2013||2007-086|