STI-bounded Single-photon Detector in a Deep-submicron CMOS Process

Technology Description

Researchers at the University of California , San Diego , have invented a compact Silicon single-photon Avalanche Photodetector (SPAD) that is manufacturable using commercially available deep-submicron standard CMOS processing methods.

The uniqueness of the device is in its compact ability to prevent premature breakdown. The benefits of the device over existing technology are improved timing accuracy, increased dynamic range due to decreased dark current, increased frame rate due to reduced capacitance, reduced time lag inaccuracy (jitter), enhanced spatial resolution, and reduced power consumption and heat generation.

By integrating an array of such detectors, with appropriate timing, biasing, and counting circuitry, and with active illumination, one may acquire a low-light-level two or three-dimensional image with a higher dynamic range than present detectors. Alternatively, one could acquire an image of a fluorescent sample with improved S/N using Time-Correlated Single-photon counting techniques. Finally, this device allows one to generate two distinct, but simultaneous, electrical signals in the same pixel—one corresponding to absorption of a short wavelength photon, the other being a longer wavelength photon.

State Of Development

This technology is in early-stage development, but is presently available for licensing.

Patent Status