Optimization of EUV Lithography Light-Source from Laser-Produced Plasma

Technology Description

Researchers at UC San Diego have developed and demonstrated a technique that reduces fast ion energies and thereby reduces ablated material with essentially no loss in conversion energy (laser input to plasma emission).

Existing methods are either complicated, expensive, or result in poor energy conversion. The present approach reduces fast ion energies up to a factor of thirty with no decrease in conversion energy. The technique is cost effective and allows use of solid density targets instead of droplets, foams, fibres, etc.

Applications

Possible applications are to EUV lithography light-sources, EUV sources for microscopy, pulsed laser deposition (PLD), and laser produced plasma X-ray sources.

Intellectual Property Info

This technology is presently available for licensing.

Patent Status