Volumetric Hole Injection with Intentional V-Defects
Tech ID: 31878 / UC Case 2020-058-0
V-shaped defects markedly improve the efficiency of LEDs, especially yellow and green LEDs, by diminishing their forward voltage. However, the efficiency droop is still observed as with standard LEDs because the quantum wells of the active layer must be laterally injected as a result of the V-defection. Reducing the efficiency droop would require a structure that ensures volumetric injection throughout the quantum wells.
Researchers at the University of California, Santa Barbara have developed a planar hole waveguide design such that the laterally injected minority hole diffusion length in the quantum barriers is increased. This increases the volume of the active region, reduces the carrier densities, and lifts the device efficiency as a result. This can be achieved through MOCVD growth and is easily implemented into current LED manufactures. It can be applied to all wavelength LEDs and lasers, even white LEDs.
- Improved LED efficiency
- Applicable to devices of all wavelengths
- Easily implemented into current fabrication procedures
|Patent Cooperation Treaty