III-Nitride Tunnel Junction with Modified Interface

Tech ID: 25740 / UC Case 2016-245-0

Background

A commonly explored limitation of p-GaN is that it is a poor current spreading layer and that traditional p-contacts will increase operating voltages in III-nitride devices. The introduction of tunnel junctions solves these issues and expands the opportunities for new device designs. This technology seizes the opportunity for higher tunneling currents.

Description

Researchers at UC Santa Barbara have developed a method for improving the tunneling currents of semipolar III-nitride devices by modifying the very highly doped (n+/p+) interface to reduce the energy barrier associated with tunneling. The modification involves introducing extra charge carriers, such as dopant atoms, or impurities that results in electronic trap states which enhance tunneling. 

Advantages

  • Reduced operating voltage
  • Current spreading with GaN
  • No requirement for a TCO or silver mirrors
  • Simple fabrication
  • Ability to incorporate multiple active regions into a single device

Applications

  • LEDs
  • Edge emitting laser diodes
  • Vertical cavity surface emitting lasers (VCSELs)
  • Solar cells

Patent Status

Country Type Number Dated Case
United States Of America Published Application 18-0374699 12/27/2018 2016-245
 

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Other Information

Keywords

indled, indssl, LED, solar cells, edge emitting laser diodes, III-nitride, p-GaN, indfeat, indmicroelec

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