Improved laser diodes which use distributed feedback (DFB) or distributed Bragg reflector (DBR) gratings to enable single wavelength operation in Group III-N lasers operating at visible or ultraviolet wavelengths.
Laser diodes currently available in the industry are limited in their capabilities and could benefit from more advanced structures such as those incorporating distributed feedback (DFB) gratings. Present day methods for fabricating DFB lasers use epitaxial regrowth or etching steps that damage native semiconductor layers, have inadequate optical power retention, and may reduce the effective contact area by the grating duty cycle. Further, laser designs with thin cladding layers and poor carrier mobility may result in non-uniform carrier injections, which alters electrical injection levels.
Researchers at the University of California, Santa Barbara have invented improved laser diodes which use distributed feedback (DFB) or distributed Bragg reflector (DBR) gratings to enable single wavelength operation in Group III-N lasers operating at visible or ultraviolet wavelengths. The gratings are formed in transparent conducting oxides and constructed by methods without epitaxial regrowth or etching steps that damage the laser active region or adjacent epitaxial layers. This invention significantly improves the performance and reduces the manufacturing cost of DFB laser diodes and enables operation at previously unattainable wavelengths. Monolithic or hybrid integration with other optoelectronic components are also possible due to the removal of cleaved and etched facets from the construction process.
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