This technology is currently not available for licensing
Tech ID: 30118
Additional Technologies by these Inventors
- Bonding of Heterogeneous Material for Improved Yield and Performance of Photonic Integrated Circuits
- Epitaxial Laser Integration on Silicon Based Substrates
- Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
- Eliminating Misfit Dislocations with In-Situ Compliant Substrate Formation
- III-Nitride-Based Vertical Cavity Surface Emitting Laser (VCSEL) with a Dielectric P-Side Lens
- Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
- Integrated Reconfigurable Circulator
- Ultraviolet Laser Diode on Nano-Porous AlGaN template
- Improved Reliability & Enhanced Performance of III-Nitride Tunnel Junction Optoelectronic Devices
- Magneto-Optic Modulator
- Quantum Dot Photonic Integrated Circuits
- (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
- Method For The Removal Of Devices Using The Trench
- Thermally Stable, Laser-Driven White Lighting Device
- Integrated Dielectric Waveguide and Semiconductor Layer
- Orthogonal Mode Laser Gyro
- Methods for Fabricating III-Nitride Tunnel Junction Devices
- Contact Architectures for Tunnel Junction Devices
- III-Nitride Tunnel Junction LED with High Wall Plug Efficiency
- Novel Multilayer Structure for High-Efficiency UV and Far-UV Light-Emitting Devices
- A Method To Lift-Off Nitride Materials With Electrochemical Etch
- High-Intensity Solid State White Laser Diode
- Monolithically Integrated Laser-Nonlinear Photonic Devices
- Nitride Based Ultraviolet LED with an Ultraviolet Transparent Contact
- Misfit Dislocation Free Quantum Dot Lasers
- High-Efficiency and High-Power III-Nitride Devices Grown on or Above a Strain Relaxed Template
- III-Nitride Based VCSEL with Curved Mirror on P-Side of the Aperture
